165 results on '"Mita, Seiji"'
Search Results
2. Anderson transition in compositionally graded p-AlGaN
3. High p-conductivity in AlGaN enabled by polarization field engineering
4. High conductivity in Ge-doped AlN achieved by a non-equilibrium process
5. Formation and characterization of Ti-Vacancy complex in AlN as a candidate for qubit
6. Color centers in AlN as qubit candidates: point defect management
7. Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
8. High conductivity and low activation energy in p-type AlGaN
9. Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
10. High electron mobility in AlN:Si by point and extended defect management
11. Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
12. Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
13. On the conduction mechanism in compositionally graded AlGaN
14. Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
15. Controllable N-type Doping In Ultra-Wide Bandgap AlN By Chemical Potential Control
16. UVC optoelectronics based on AlGaN on AlN single crystal substrates
17. Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates
18. Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
19. Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
20. Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
21. Growth of relaxed AlGaN layers on native GaN
22. Doping and compensation in heavily Mg doped Al-rich AlGaN films
23. The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
24. Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control
25. A pathway to highly conducting Ge-doped AlGaN
26. On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
27. Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN
28. (Invited) Ion Implantation and Polarity Control: Paths Toward a III-Nitride Superjunction
29. On the Ge shallow-to-deep level transition in Al-rich AlGaN
30. Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
31. Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown Fields
32. High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
33. Weak localization and dimensional crossover in compositionally graded AlxGa1−xN
34. Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
35. High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
36. Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy
37. Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding
38. The nature of the DX state in Ge-doped AlGaN
39. Shallow Si donor in ion-implanted homoepitaxial AlN
40. Recovery kinetics in high temperature annealed AlN heteroepitaxial films
41. The role of chemical potential in compensation control in Si:AlGaN
42. High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
43. Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys
44. Design of AlGaN-based quantum structures for low threshold UVC lasers
45. (Invited) Advances in Ion Implantation of GaN and AlN
46. Quantum Well-Width Dependence Study on AlGaN Based UVC Laser
47. Development of Near UV Laser Diodes
48. Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation
49. The polarization field in Al-rich AlGaN multiple quantum wells
50. Quasi-phase-matched second harmonic generation of UV light using AlN waveguides
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