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1. Mott resistive switching initiated by topological defects

2. Confinement-Induced Isosymmetric Metal–Insulator Transition in Ultrathin Epitaxial V2O3 Films

4. (Invited) Hybrid Nanodevices for Technology and Fun

5. Raman spectroscopy and phonon dynamics in strained V2O3

6. Coherent control of the orbital occupation driving the insulator-to-metal Mott transition in V2O3

8. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications (Adv. Mater. 32/2022)

9. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

10. Nanoscale self-organization and metastable non-thermal metallicity in Mott insulators

12. Nanoscale self-organisation in Mott insulators: a richness in disguise

18. Multilayered graphene grafted copper wires

21. Ultrafast orbital manipulation and Mott physics in multi-band correlated materials

22. Coupling of ferromagnetism and structural phase transition in V2O3/Co bilayers

25. Modulation of the Schottky Barrier Height for CMOS advanced contacts

27. Modulation of the Schottky barrier height for advanced contact schemes

37. Epitaxial growth of V2O3 on Al2O3 by reactive MBE

41. Type-1.5 Superconductivity

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