48 results on '"Markeev, Andrey M."'
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2. Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS2 Films
3. Low-Energy He+ Ions Induced Functionalization of the MoS2 Surface for ALD HfO2 Growth Enhancement
4. Stabilization of the Nano-Sized 1T Phase through Rhenium Doping in the Metal–Organic CVD MoS2 Films
5. Broadband Optical Properties of Bi2Se3
6. CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems
7. Correction: Tunable optical properties of transition metal dichalcogenide nanoparticles synthesized by femtosecond laser ablation and fragmentation
8. Highly-Stable Sers-Active Silver Nanoparticles Formed by Post-Deposition Low-Energy Ion Irradiation
9. Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets
10. High-refractive index and mechanically cleavable non-van der Waals InGaS3
11. Field-Effect Transistor Based on 2D Microcrystalline MoS2 Film Grown by Sulfurization of Atomically Layer Deposited MoO3
12. On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes
13. Synthesis of Titanium Nitride Nanoparticles by Pulsed Laser Ablation in Different Aqueous and Organic Solutions
14. Topological phase singularities in atomically thin high-refractive-index materials
15. Microextrusion printing of gas-sensitive planar anisotropic NiO nanostructures and their surface modification in an H2S atmosphere
16. Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors
17. Broadband Optical Properties of Atomically Thin PtS2 and PtSe2
18. Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf0.5Zr0.5O2/TiN Capacitors
19. Interface engineering for enhancement of the analog properties of W/WO3− x /HfO2/Pd resistance switched structures
20. Atomic Layer Deposition of Ultrathin Tungsten Oxide Films from WH2(Cp)2 and Ozone
21. Dynamic imprint recovery as an origin of the pulse width dependence of retention in Hf0.5Zr0.5O2-based capacitors
22. Optical Constants and Structural Properties of Epitaxial MoS2 Monolayers
23. Optical Constants of Chemical Vapor Deposited Graphene for Photonic Applications
24. Microplotter printing of planar solid electrolytes in the CeO2–Y2O3 system
25. Band Excitation Piezoresponse Force Microscopy Adapted for Weak Ferroelectrics: On-the-Fly Tuning of the Central Band Frequency
26. Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices
27. Band Alignment of Graphene/MoS 2 /Fluorine Tin Oxide Heterojunction for Photodetector Application
28. Platinum Based Nanoparticles Produced by a Pulsed Spark Discharge as a Promising Material for Gas Sensors
29. Influence of Reducing Agent on Properties of Thin WS2 Nanosheets Prepared by Sulfurization of Atomic Layer-Deposited WO3
30. Nanoscale Tailoring of Ferroelectricity in a Thin Dielectric Film
31. Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures
32. Gas-Aggregated Copper Nanoparticles with Long-term Plasmon Resonance Stability
33. Pen plotter printing of Co3O4 thin films: features of the microstructure, optical, electrophysical and gas-sensing properties
34. Radical-Enhanced Atomic Layer Deposition of a Tungsten Oxide Film with the Tunable Oxygen Vacancy Concentration
35. Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta 2 O 5 /Ta and TiN/HfO 2 /Ta 2 O 5 /Ta Stacks
36. Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
37. Band Alignment in As‐Transferred and Annealed Graphene/MoS 2 Heterostructures
38. Ferroelectric Second-Order Memristor
39. Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films
40. Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping
41. Atomic Layer Deposited Oxygen‐Deficient TaOxLayers for Electroforming‐Free and Reliable Resistance Switching Memory
42. La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors
43. Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films
44. Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
45. Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
46. In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
47. Leakage Currents Mechanism in Thin Films of Ferroelectric Hf0.5Zr0.5O2
48. Atomic layer deposition of Al2O3 and AlxTi1−xOy thin films on N2O plasma pretreated carbon materials
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