38 results on '"Manning, Ian"'
Search Results
2. Multi-decadal coastal evolution of a North Atlantic shelf-edge vegetated sand island — Sable Island, Canada
3. Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing
4. Measurement of Dislocation Density in SiC Wafers Using Production XRT
5. Advances in 200 mm 4H SiC Wafer Development and Production
6. Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals
7. Comparing the Spatial Accuracy of Digital Surface Models from Four Unoccupied Aerial Systems: Photogrammetry Versus LiDAR
8. Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production
9. Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers
10. Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals
11. Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals
12. Data Warehousing — adopting an architectural view, and maximizing cost benefits
13. Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
14. Impact of Subsurface Damage on SiC Wafer Shape
15. Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy
16. Optimization of 150 mm 4H SiC Substrate Crystal Quality
17. Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers
18. Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
19. Prismatic Slip in PVT-Grown 4H-SiC Crystals
20. Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers
21. Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers
22. Large Area 4H SiC Products for Power Electronic Devices
23. Post-Growth Micropipe Formation in 4H-SiC
24. Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers
25. High Quality 150 mm 4H SiC Wafers for Power Device Production
26. Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
27. Dislocation bending and tensile stress generation in GaN and AlGaN films
28. Organization–environment adaptation: A macro‐level shift in modeling work distress and morale
29. Effects of Silicon Doping and Threading Dislocation Density on Stress Evolution in AlGaN Films
30. In situ measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films
31. Development and Characterization of Au−YSZ Surface Plasmon Resonance Based Sensing Materials: High Temperature Detection of CO
32. Gerontology in Australia
33. Longitudinal working models
34. The geographic distribution of poverty in Australia
35. Continuity and Change in Australian Economic Policy: The Social Welfare Services
36. Social Security and the Future
37. Book reviews and bibliography
38. The 1970s: A Decade of Social Security Policy
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.