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4. 48. THE POTENTIAL MICROBIOTA BIOMARKER AND FUNCTIONAL CHARACTERISTICS BETWEEN PATIENTS WITH MAJOR DEPRESSIVE DISORDER, BIPOLAR DISORDER, AND HEALTHY CONTROLS

8. Total Neutron Cross-Section Measurement on CH with a Novel 3D-Projection Scintillator Detector

10. Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment

14. Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation

17. Use of a supercritical fluid treatment to improve switching region in resistive random access memory

19. Effects of X-ray accelerating voltage on electrical properties and reliability for ferroelectric random-access memory (FeRAM)

24. Clarifying the switching layer transformation through analysis of an abnormal I–V curves with increasing set compliance current in oxide-based resistive random access memory

26. Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

27. Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer

30. Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory

31. Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments

33. Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

35. Investigation on the current conduction mechanism of HfZrOx ferroelectric memory

36. Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

38. Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device

39. Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution

40. The Effect of Humidity on Reducing Forming Voltage in Conductive-Bridge Random Access Memory With an Alloy Electrode

46. Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM

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