73 results on '"Laügt, M."'
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2. Residual strain in nonpolar a-plane Zn1−xMgxO (<x<0.55) and its effect on the band structure of (Zn,Mg)O/ZnO quantum wells
3. Interface structure and anisotropic strain relaxation of nonpolar wurtzite (112¯) and (101¯) orientations: ZnO epilayers grown on sapphire
4. Non-polara-plane ZnMgO1/ZnO quantum wells grown by molecular beam epitaxy
5. Growth and characterization of A-plane ZnO and ZnCoO based heterostructures
6. Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy
7. Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission
8. Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC
9. Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction
10. Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X‐ray microdiffraction
11. Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications
12. Magnetic Anisotropy ofCo2+as Signature of Intrinsic Ferromagnetism inZnO∶Co
13. Structural and electronic properties of ZnMgO/ZnO quantum wells
14. Faceting and structural anisotropy of nanopatterned CdO(110) layers
15. AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)
16. Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy
17. Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE
18. Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors
19. (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy
20. From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction
21. Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy
22. An X-ray and TEM study of inhomogeneous ordering in AlxGa1−xN layers grown by MOCVD
23. Ordering in undoped hexagonal AlxGa1xN grown on sapphire (0001) with 0.09 < x < 0.247
24. Ordering in undoped hexagonal AlxGa1xN grownon sapphire (0001) with 0.09 < x < 0.247
25. GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
26. In situgrowth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy
27. Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire
28. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
29. Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates
30. Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
31. Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy
32. Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition
33. From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization
34. Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)
35. High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO
36. Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)
37. Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy
38. Metal Organic Vapour Phase Epitaxy (MOVPE) Growth of GaN(n)/SiC(p) Heterostructures
39. Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers
40. Effects of Built-in Polarization Field on the Optical Properties of AlGaN/GaN Quantum Wells
41. Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN
42. Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
43. Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer
44. Molecular Beam Epitaxy of GaN under N-rich Conditions using NH3
45. Optimizing scans on asymmetric reflections
46. Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells
47. Critical thickness of Zn1−xCdxSe/ZnSe heterostructures grown on relaxed ZnSe buffer layers on bare GaAs substrates
48. Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers
49. GaN epitaxial growth on sapphire (0 0 0 1): the role of the substrate nitridation
50. Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates
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