17 results on '"Kusai, Haruka"'
Search Results
2. Metal-Assisted Solid Phase Crystallization of Vertical Si Channel in 3D Flash Memory
3. Re-Examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation
4. Charge Trapping and Reliability Properties of MONOS Memory with High-k Blocking Layer
5. Metal-Assisted Solid-Phase Crystallization Process for Vertical Monocrystalline Si Channel in 3D Flash Memory
6. Improvement of erase-retention trade-off in metal–oxide–nitride–oxide–silicon memories by control of nitrogen profile in SiN charge-trapping layer
7. Highly Scalable Horizontal Channel 3-D NAND Memory Excellent in Compatibility With Conventional Fabrication Technology
8. Re-Examination of Performance and Reliability Degradation in Metal–Oxide–Nitride–Oxide–Semiconductor Memory with Ultrathin SiN Charge Trap Layers
9. Impact of program/erase stress induced hole current on data retention degradation for MONOS memories
10. Re-Examination of Performance and Reliability Degradation in Metal–Oxide–Nitride–Oxide–Semiconductor Memory with Ultrathin SiN Charge Trap Layers
11. Enhanced magnetoresistance due to charging effects in a molecular nanocomposite spin device
12. A nuclear magnetic resonance study on rubrene-cobalt nanocomposites
13. Large magnetoresistance in rubrene-Co nano-composites
14. Fabrication of field-effect transistor devices with fullerodendron by solution process
15. Fabrication of a logic gate circuit based on ambipolar field-effect transistors with thin films of C60 and pentacene
16. Fabrication of field-effect transistor device with higher fullerene, C88
17. Metallic phase in the metal-intercalated higher fullereneRb8.8(7)C84
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.