306 results on '"Kudrawiec R"'
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2. Dislocation density as a factor compensating the polarization doping effect in graded p-AlGaN contact layers
3. GaSbBi Alloys and Heterostructures: Fabrication and Properties
4. Bands alignment between organic layers of Alq3, Gaq3 and Erq3 and graphene on 6H-SiC(0001)
5. Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content (In,Ga)N Quantum Wells
6. Defect Characterization of N-Rich Ganas Tertiary Alloys
7. Optical markers of magnetic phase transition in CrSBr
8. Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
9. X-ray diffraction studies of residual strain in AlN/sapphire templates
10. Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range
11. SEMICONDUCTING Mg2Sn AND Mg2Ge NANOLAYERS ON Si(111) SUBSTRATES: FORMATION, STRUCTURE AND PROPERTIES
12. Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS2, MoSe2, MoTe2, WS2, and WSe2 Crystals
13. Radiative and nonradiative recombination processes in GaNP(As) alloys
14. III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources
15. Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP
16. Band engineering in nitrogen-rich AlGaNAs quaternary alloys
17. Contactless electroreflectance spectroscopy with a semitransparent capacitor made of a silver mesh of ultrathin lines
18. Nesting-like band gap in bismuth sulfide Bi2S3
19. Silicon-Integrated Red-Light Optical Gain Medium Based on BGaAs/GaP Quantum Wells
20. SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy
21. Valley polarization investigation of GeS under high pressure
22. Boron influence on bandgap and photoluminescence in BGaN grown on AlN
23. Photo- and Electro-reflectance of III–V-N Compounds and Low Dimensional Structures
24. GaNAsSb Alloy and Its Potential for Device Applications
25. Optical properties and dynamics of excitons in Ga(Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior
26. Bowing of the band gap and spin-orbit splitting energy in BGaAs
27. Hidden spin-polarized bands in semiconducting 2H-MoTe2
28. Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states
29. Supercontinuum source as a probing beam in photoreflectance and photoacoustic spectroscopy
30. Verification of threading dislocations density estimation methods suitable for efficient structural characterization of AlxGa1−xN/GaN heterostructures grown by MOVPE
31. Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys
32. As-related stability of the band gap temperature dependence in N-rich GaNAs
33. Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
34. Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN
35. Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs
36. On intrinsic Stokes shift in wide GaN/AlGaN polar quantum wells
37. Study of delocalized and localized states in ZnSeO layers with photoluminescence, micro-photoluminescence, and time-resolved photoluminescence
38. Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing
39. Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
40. Direct and indirect optical transitions in bulk and atomically thin MoS2 studied by photoreflectance and photoacoustic spectroscopy
41. Revealing the nature of photoluminescence emission in the metal-halide double perovskite Cs2AgBiBr6
42. Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers
43. An AlInAsSb/GaSb Superlattice Analysis – The Digital Alloy Iduced Conduction Band States
44. Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107, 262107 (2016)]
45. High-pressure Raman scattering in bulk HfS2: comparison of density functional theory methods in layered MS2 compounds (M = Hf, Mo) under compression
46. Temperature dependence of band gaps in dilute bismides
47. Contactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InP
48. Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys
49. Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure
50. Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys
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