68 results on '"Kubis, Tillmann"'
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2. Tuning Band Tails in Mono- and Multilayered Transition-Metal Dichalcogenides: A Detailed Assessment and a Quick-Reference Guide
3. Self-energies in Atomistic Quantum Transport for Energy Transfer at Irregular Interfaces
4. Atomic-level charge transport mechanism in gate-tunable anti-ambipolar van der Waals heterojunctions
5. Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below
6. Mode-space-compatible inelastic scattering in atomistic nonequilibrium Green’s function implementations
7. Introduction of multi-particle Büttiker probes—Bridging the gap between drift diffusion and quantum transport
8. Quantum Mechanical Modeling of Reaction Rate Acceleration in Microdroplets
9. Introducing Open Boundary Conditions in Modeling Nonperiodic Materials and Interfaces: The Impact of the Periodicity Assumption
10. Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations
11. Band-tail Formation and Band-gap Narrowing Driven by Polar Optical Phonons and Charged Impurities in Atomically Resolved III-V Semiconductors and Nanodevices
12. NemoViz: a visual interactive system for atomistic simulations design
13. Self-energies: enabling multiphysics and multiscaling in optoelectronic quantum transport modeling
14. Electron-only explicit screening quantum transport model for semiconductor nanodevices
15. Nonequilibrium Green’s function method: Transport and band tail predictions in transition metal dichalcogenides
16. Nonequilibrium Green’s function method: Büttiker probes for carrier generation and recombination
17. Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts
18. Explicit screening full band quantum transport model for semiconductor nanodevices
19. Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors
20. Quantitative Multi-Scale, Multi-Physics Quantum Transport Modeling of GaN-Based Light Emitting Diodes
21. Control of interlayer physics in 2H transition metal dichalcogenides
22. Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10−9 Ω·cm? target?
23. A high-current InP-channel triple heterojunction tunnel transistor design
24. Thermal transport across metal silicide-silicon interfaces: First-principles calculations and Green's function transport simulations
25. NEMO5: realistic and efficient NEGF simulations of GaN light-emitting diodes
26. NEMO5: Predicting MoS2 heterojunctions
27. Transferable tight-binding model for strained group IV and III-V materials and heterostructures
28. Multi-scale, multi-physics NEGF quantum transport for nitride LEDs
29. Incoherent transport in NEMO5: realistic and efficient scattering on phonons
30. Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors
31. General Retarded Contact Self-energies in and beyond the Non-equilibrium Green's Functions Method
32. Surface Passivation in Empirical Tight Binding
33. In-surface confinement of topological insulator nanowire surface states
34. Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution
35. Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction
36. Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)]
37. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations
38. Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures
39. Design and Simulation of Two-Dimensional Superlattice Steep Transistors
40. Non-equilibrium Green's functions method: Non-trivial and disordered leads
41. Quantum transport in NEMO5: Algorithm improvements and high performance implementation
42. Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors
43. An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation
44. An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II. Application—Effect of quantum confinement and homogeneous strain on Cu conductance
45. Modeling techniques for quantum cascade lasers
46. Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed $\Gamma$-L Valleys
47. Design principles for HgTe based topological insulator devices
48. Engineering Nanowire n-MOSFETs at $L_{g}<8~{\rm nm}$
49. Low rank approximation method for efficient Green's function calculation of dissipative quantum transport
50. Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark
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