71 results on '"Juhel, M."'
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2. Trench filling with phosphorus-doped monocrystalline and polycrystalline silicon
3. Copper Surface Analysis with ToF-SIMS: Spectra Interpretation and Stability Issues
4. Redistribution of phosphorus during NiPtSi formation on in-situ doped Si
5. 450 GHz $f_{\text{T}}$ SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node
6. Redistribution of phosphorus during Ni0.9Pt0.1-based silicide formation on phosphorus implanted Si substrates
7. Point and extended defect interaction in low – high energy phosphorus implantation sequences
8. Hafnium Impurity Defects in Silicon: A Characterization
9. SiGe oxidation kinetics and oxide density measured by resonant soft X-ray reflectivity
10. Improvement of etching and cleaning methods for integration of raised source and drain in FD-SOI technologies
11. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors
12. Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation
13. Low thermal budget for Si and SiGe surface preparation for FD-SOI technology
14. STEM EELS/EDX dopant analysis of nm-scale Si devices
15. (Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors
16. Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation
17. Pt redistribution in N-MOS transistors during Ni salicide process
18. Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis
19. Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks
20. Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold
21. New generation of reactive pre-clean prior to barrier–seed deposition to preserve ULK integrity
22. Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor
23. STEM EDX applications for arsenic dopant mapping in nanometer scale silicon devices
24. Validation of a liquid chromatography-tandem mass spectrometry screening method to monitor 58 antibiotics in milk: a qualitative approach
25. Two-dimensional quantitative mapping of arsenic in nanometer-scale silicon devices using STEM EELS–EDX spectroscopy
26. Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties
27. Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source
28. Self-aligned nickel–platinum silicide oxidation
29. Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates
30. Post electrochemical Cu deposition anneal impact on stress-voiding in individual vias
31. Fragmentation of molecular compounds on silicon wafers and low dielectric constant materials studied by time-of-flight secondary ion mass spectrometry using a polyatomic ion source
32. Copper Surface Analysis with ToF-SIMS: Spectra Interpretation and Stability Issues
33. Impact of surface preparation on nickel–platinum alloy silicide phase formation
34. Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65nm technology node
35. SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV
36. Poly-Si gate engineering for advanced CMOS transistors by germanium implantation
37. Determination of the Spatial Resolution Function in Energy Filtered TEM and Application to Thin Gate Oxide Measurements at 80 eV Energy Loss
38. SIMS depth profiling of SiGe:C structures in test pattern areas using low energy cesium with a Cameca IMS Wf
39. Solid Phase Epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions
40. Thermal Nitridation of Chemical Dielectrics as an Easy Approach to Ultra-thin Gate Oxide Processing
41. Detection and Identification of Organic Contamination on Silicon Substrates
42. Overview of Cu contamination during integration in a dual damascene architecture for sub-quarter micron technology
43. CBE growth of carbon doped InGaAs/InP HBTs for 25Gbit/s circuits
44. Evidence of hydrogen–carbon interactions in plasma hydrogenated carbon-doped n-InP
45. Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
46. Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments
47. Wet thermal oxidation of AlAsSb alloys lattice matched to InP
48. Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine
49. Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4
50. Molecular beam epitaxy of AlGaAsSb system for 1.55 μm Bragg mirrors
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