71 results on '"Ishiwata, N."'
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2. Current-induced magnetic domain wall motion below intrinsic threshold triggered by Walker breakdown
3. Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization
4. Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire
5. Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits
6. Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions
7. Attenuation of propagating spin wave induced by layered nanostructures
8. Electrical control of Curie temperature in cobalt using an ionic liquid film
9. Electrical control of the ferromagnetic phase transition in cobalt at room temperature
10. Observation of magnetic domain wall motion induced by adiabatic spin transfer torque in Co/Ni nano-wires
11. Magnetic field insensitivity of magnetic domain wall velocity induced by electrical current in Co/Ni nanowire
12. Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire
13. Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire
14. Observation of the intrinsic pinning of a magnetic domain wall in a ferromagnetic nanowire
15. Current-induced domain wall motion in Co/Ni nano-wires with different Co and Ni thicknesses
16. Current Status and Future Challenge of Embedded High-speed MRAM
17. Relation between critical current of domain wall motion and wire dimension in perpendicularly magnetized Co/Ni nanowires
18. High-speed Magnetic Memory based on Spin-Torque Domain Wall Motion
19. Evaluation of Scalability for Current-Driven Domain Wall Motion in a Co/Ni Multilayer Strip for Memory Applications
20. Performance of shape-varying magnetic tunneling junction for high-speed magnetic random access memory cells
21. A 90nm 12ns 32Mb 2T1MTJ MRAM
22. Low write-current magnetic random access memory cell with anisotropy-varied free layers
23. Current-Driven Domain Wall Motion, Nucleation, and Propagation in a Co/Pt Multi-Layer Strip with a Stepped Structure
24. Intrinsic Threshold Current Density of Domain Wall Motion in Nanostrips With Perpendicular Magnetic Anisotropy for Use in Low-Write-Current MRAMs
25. Analysis of current-driven domain wall motion from pinning sites in nanostrips with perpendicular magnetic anisotropy
26. Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell
27. Reduction of critical current density for domain wall motion in U-shaped magnetic patterns
28. Micromagnetic analysis of current driven domain wall motion in nanostrips with perpendicular magnetic anisotropy
29. Reduction of Writing Field Distribution in a Magnetic Random Access Memory With Toggle Switching
30. Scalable Cell Technology Utilizing Domain Wall Motion for High-speed MRAM
31. Analysis for toggling magnetic random access memories with low writing field using four ferromagnetic layers for free layer stack
32. Large Exchange Coupling in Synthetic Antiferromagnet With Ultrathin Seed Layer
33. Large exchange coupling and high thermal stability in synthetic antiferromagnet with ultrathin seed layer
34. Enlargement of Operating Window and Reduction of Switching Current in MRAM with Yoke Wire
35. Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories
36. Bit yield improvement by precise control of stray fields from SAF pinned layers for high-density MRAMs
37. Thermally Stable Magnetic Tunnel Junctions for High Density MRAM
38. Evaluation of the Crystal Structure, Film Properties, and B[sub s] of Electroplated CoNiFe Films
39. Read/write characteristics of focused-ion-beam-etched heads for perpendicular magnetic recording media
40. Thermal asperity of TMR heads for removable disk drives
41. Co-Ni-Fe write heads with a 10-μm yoke length for high-speed recording
42. Write Performance of Recording Heads with a High-Bs Pole for High-Hc Media.
43. Highly defined narrow track write heads fabricated by focused ion beam trimming with the Al/sub 2/O/sub 3/ refilling process
44. Highly defined narrow track write heads fabricated by focused ion beam trimming with the Al/sub 2/O/sub 3/ refilling process
45. Anisotropy control in fabrication process for NiMn spin-valve dual element heads
46. Study of Alumina Films Used as MR Head Gap Materials
47. Effects of Recording Heads on Off-Track Noise Characteristics.
48. Narrow track MR head technology
49. Three-Dimensional Thermal Behavior Analysis for a Shielded Magnetoresistive Head.
50. Offtrack characteristics on media noise for Co-Cr-Ta films
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