137 results on '"Giannazzo, F."'
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2. Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN
3. Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
4. Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
5. Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliability
6. Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films
7. Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs
8. Scanning capacitance microscopy of semiconductors for process and device characterisation
9. Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing
10. Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)
11. Advances in the Fabrication of Large-Area Back-Gated Graphene Field-Effect Transistors on Plastics: Platform for Flexible Electronics and Sensing
12. SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs
13. Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation
14. Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
15. Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures
16. Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects
17. Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition
18. Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
19. Morphological and Structural Characterization of Graphene Grown by Thermal Decomposition of 4H-SiC (0001) and by C Segregation on Ni
20. Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
21. On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
22. Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures
23. Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress
24. Manipulation of epitaxial graphene towards novel properties and applications
25. Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC
26. Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
27. Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy
28. Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor
29. Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
30. Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
31. Photoinduced charge transfer from Carbon Dots to Graphene in solid composite
32. Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere
33. Nanoscale electrical mapping of two-dimensional materials by conductive atomic force microscopy for transistors applications
34. Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC
35. Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates
36. Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition
37. Ti/Al-based contacts to p-type SiC and GaN for power device applications
38. Graphene integration with nitride semiconductors for high power and high frequency electronics
39. Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors
40. Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy
41. Challenges in graphene integration for high-frequency electronics
42. Graphene p-Type Doping and Stability by Thermal Treatments in Molecular Oxygen Controlled Atmosphere
43. Nanoscale inhomogeneity of the Schottky barrier and resistivity inMoS2multilayers
44. Interface disorder probed at the atomic scale for graphene grown on the C face of SiC
45. Atomistic origins of CH3NH3PbI3 degradation to PbI2 in vacuum
46. Carrier distribution in quantum nanostructures studied by scanning capacitance microscopy
47. Nanoscale reliability aspects of insulator onto wide band gap compounds
48. Current transport in graphene/AlGaN/GaN heterostructures
49. Micro-Raman characterization of graphene grown on SiC(000-1)
50. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure
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