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10. SEMICONDUCTING Mg2Sn AND Mg2Ge NANOLAYERS ON Si(111) SUBSTRATES: FORMATION, STRUCTURE AND PROPERTIES

27. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

28. An approach to growth of Fe–Si multilayers with controlled composition profile—a way to exchange coupled thin films

40. Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties

44. Brief observe on iron silicide growth on amorphous silicon

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