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1. Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe ${p}$ MOSFETs

2. Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain

3. Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs

4. Bias Dependence of Total Ionizing Dose Effects in SiGe-MOS FinFETs

6. Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

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