26 results on '"Dias, I. F. L."'
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2. Influence of TiO2 nanoparticles on the optical and structural properties of PPV thin films converted at low temperatures
3. The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1−xAs quantum dots
4. Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells
5. Contrasting LH-HH subband splitting of strained quantum wells grown along [001] and [113] directions
6. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
7. Effects of confinement on the electron–phonon interaction in Al0.18Ga0.82As/GaAs quantum wells
8. The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/AlxGa1−xAs quantum wells
9. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs∕AlGaAs
10. Identification of the optically active vibrational modes in the photoluminescence of MEH-PPV films
11. Temperature-dependent photoluminescence spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs single quantum wells under different excitation intensities
12. Correlation between luminescence properties of AlxGa1−xAs∕GaAs single quantum wells and barrier composition fluctuation
13. Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice
14. Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP
15. The effect of potential fluctuations on the optical properties of InGaAs∕InGaAlAs single and coupled double quantum wells
16. Photoluminescence properties of Te doped AlGaAsSb alloys
17. Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP
18. The effect of potential fluctuations on the optical properties of InGaAs∕InAlAs superlattices
19. Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs
20. Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy
21. GaNAsSb: how does it compare with other dilute III V-nitride alloys?
22. Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates
23. Temperature dependence of optical transitions in AlGaAs
24. Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis
25. Band-edge modifications due to photogenerated carriers in singlep-type δ-doped GaAs layers
26. Wet thermal oxidation of AlAsSb alloys lattice matched to InP
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