40 results on '"Denais, M."'
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2. New Insights on Percolation Theory and the Origin of Oxide Breakdown Thickness and Process Deposition Dependence
3. Unified Perspective of NBTI and Hot-Carrier Degradation in CMOS using on-the-Fly Bias Patterns
4. On the 6T-SRAM Cells Degradation Characterization in Ultra-Scaled CMOS Technologies
5. New Insights Into Recovery Characteristics During PMOS NBTI and CHC Degradation
6. Impact of Hot Carrier Degradation Modes on I/O nMOSFETS Aging Prediction
7. Designing in reliability in advanced CMOS technologies
8. Origin of Vt Instabilities in High-$k$Dielectrics Jahn–Teller Effect or Oxygen Vacancies
9. Physical Modeling of Negative Bias Temperature Instabilities for Predictive Extrapolation
10. New Insights into Recovery Characteristics Post NBTI Stress
11. Paradigm Shift for NBTI Characterization in Ultra-Scaled CMOS Technologies
12. NBTI degradation: From physical mechanisms to modelling
13. Reliability of Ultra Thin Gate Oxide CMOS Devices: Design Perspective
14. New Extensive MVHR Breakdown Models
15. Multi-vibrational hydrogen release: Physical origin of Tbd,Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides
16. Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs
17. Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown
18. Review on high-k dielectrics reliability issues
19. A thorough investigation of MOSFETs NBTI degradation
20. Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide
21. Breakdown mechanisms in ultra-thin oxides: impact of carrier energy and current through substrate hot carrier stress study
22. Low cost 65nm CMOS platform for Low Power & General Purpose applications
23. Characterization and Modeling NBTI for Design-in Reliability
24. Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO2 and high-K dielectrics)
25. Insight on physics of Hf-based dielectrics reliability
26. New methodologies of NBTI characterization eliminating recovery effects
27. Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS
28. 65nm LP/GP mix low cost platform for multi-media wireless and consumer applications
29. MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown
30. Trapping and detrapping mechanism in hafnium based dielectrics characterized by pulse gate voltage techniques
31. Reliability of Ultra Thin Gate Oxide CMOS Devices: Design Perspective
32. On-the-flycharacterization of NBTI in ultra-tihin gate oxide PMOSFET's
33. Gate stack optimization for 65nm CMOS low power and ffigh performance platform
34. Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in PMOS transistors
35. Low temperature process flow optimisation for 65nm CMOS mixed-signal applications
36. New perspectives on NBTI in advanced technologies: modelling & characterization
37. Characterization of Vt instability in hafnium based dielectrics by pulse gate voltage techniques [CMOS device applications]
38. Hydrogen release and defect generation rate in ultra-thin oxides
39. Thin oxynitride solution for digital and mixed-signal 65nm CMOS platform
40. New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing
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