26 results on '"Damlencourt, J.F."'
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2. Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique
3. Accurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS
4. A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers
5. Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS
6. A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology
7. 1/f noise in strained SiGe on Insulator MOSFETs
8. New insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology
9. Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas
10. European HELIOS project: Silicon photonic photodetector integration
11. SOI-GeOI hybrid substrates elaboration by Ge condensation: Process and electrical properties
12. The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?
13. 42 GHz waveguide germanium-on-silicon vertical PIN photodetector
14. High hole mobility GeOI pMOSFETs with high-k / metal gate on Ge condensation wafers
15. High quality Germanium-On-Insulator wafers with excellent hole mobility
16. Fabrication of SiGe-On-Insulator by Improved Ge Condensation Technique
17. Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices
18. Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics
19. Surface preparation and post thermal treatment effects on interface properties of thin Al2O3 films deposited by ALD
20. 75 nm damascene metal gate and high-k integration for advanced CMOS devices
21. High quality fully relaxed In/sub 0.65/Ga/sub 0.35/As layers grown on InP using seed membranes
22. High performance 40 nm nMOSFETs with HfO/sub 2/ gate dielectric and polysilicon damascene gate
23. Metal gate and high-k integration for advanced CMOS devices
24. Fabrication of SiGe-On-Insulator by Improved Ge Condensation Technique
25. Memory characteristics of Si quantum dot devices with SiO/sub 2//ALD Al/sub 2/O/sub 3/ tunneling dielectrics
26. Fabrication of SiGe-On-Insulator by Improved Ge Condensation Technique
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