79 results on '"Couet, S."'
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2. Towards fully electrically controlled domain-wall logic
3. Ultimate MRAM Scaling: Design Exploration of High-Density, High-Performance and Energy-Efficient VGSOT for Last Level Cache
4. Scaling the SOT track – A path towards maximizing efficiency in SOT-MRAM
5. Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs
6. Magnetic Domain Wall Memory: A DTCO study for Memory Applications
7. STT-MRAM Stochastic and Defects-aware DTCO for Last Level Cache at Advanced Process Nodes
8. Impact of Pulse Amplitude on Voltage-Driven Precessional Switching Dynamics Using Macrospin Modeling
9. Spacer-less Free-Layer for High-TMR Double Magnetic Tunnel Junction MRAM
10. Spintronic logic: from transducers to logic gates and circuits
11. First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories
12. Selective operations of multi-pillar SOT-MRAM for high density and low power embedded memories
13. Magnetic domain walls: from physics to devices
14. Demonstration of a Free-layer Developed With Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient ≥100fJ/Vm
15. Effect of nitrogen doping on the structure of metastable β-W on SiO2
16. Investigation of Microwave Loss Induced by Oxide Regrowth in High- Q Niobium Resonators
17. Nanoscale domain wall devices with magnetic tunnel junction read and write
18. Solid state qubits: how learning from CMOS fabrication can speed-up progress in Quantum Computing
19. Publisher's Note: “MgGa2O4 as alternative barrier for perpendicular MRAM junctions and VCMA” [Appl. Phys. Lett. 118, 172402 (2021)]
20. Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications
21. STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application
22. MgGa2O4 as alternative barrier for perpendicular MRAM junctions and VCMA
23. Impact of ambient temperature on the switching of voltage-controlled perpendicular magnetic tunnel junction
24. All-electrical control of scaled spin logic devices based on domain wall motion
25. Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions
26. Deterministic and Field-Free Voltage-Controlled MRAM for High Performance and Low Power Applications
27. SOT-MRAM Based Analog in-Memory Computing for DNN Inference
28. Study of precessional switching speed control in voltage-controlled perpendicular magnetic tunnel junction
29. The magneto-optical Kerr effect for efficient characterization of thermal stability in dense arrays of p-MTJs
30. Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
31. Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
32. Offset fields in perpendicularly magnetized tunnel junctions
33. Experimental observation of electron-phonon coupling enhancement in Sn nanowires caused by phonon confinement effects
34. Scaled spintronic logic device based on domain wall motion in magnetically interconnected tunnel junctions
35. Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node
36. Impact of self-heating on reliability predictions in STT-MRAM
37. Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin Modeling
38. Synthetic-Ferromagnet Pinning Layers Enabling Top-Pinned Magnetic Tunnel Junctions for High-Density Embedded Magnetic Random-Access Memory
39. Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions
40. Deposition and patterning of magnetic atom trap lattices in FePt films with periods down to 200 nm
41. SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories
42. Top-pinned STT-MRAM devices with high thermal stability hybrid freelayers for high densitymemory applications
43. Gilbert damping of high anisotropy Co/Pt multilayers
44. Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown
45. Material Developments and Domain Wall-Based Nanosecond-Scale Switching Process in Perpendicularly Magnetized STT-MRAM Cells
46. Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks
47. Impact of Ta and W-based spacers in double MgO STT-MRAM free layers on perpendicular anisotropy and damping
48. Nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells
49. Impact of processing and stack optimization on the reliability of perpendicular STT-MRAM
50. Top pinned magnetic tunnel junction stacks with high annealing tolerance for high density STT-MRAM applications
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