359 results on '"A. A. Allerman"'
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2. Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air
3. High-Al-content heterostructures and devices
4. AlGaN High Electron Mobility Transistor for High Temperature Logic
5. Low Voltage Drop AlGaN UV-A Laser Structures with Transparent Tunnel Junctions and Optimized Quantum Wells
6. High Al-content AlGaN-based HEMTs
7. High-Brightness Ultraviolet Lasers for Leap-Ahead National Security Applications
8. Multi-active region AlGaN UV LEDs with transparent tunnel junctions
9. Gate Protection for Vertical Gallium Nitride Trench MOSFETs: the Buried Field Shield
10. III-Nitride ultra-wide-bandgap electronic devices
11. Origins of epitaxial macro-terraces and macro-steps on GaN substrates
12. Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions
13. AlGaN High Electron Mobility Transistor for High-Temperature Logic
14. (Invited) Electron Channeling Contrast Imaging for Rapid Characterization of Compound Semiconductors
15. (Invited) Vertical Gallium Nitride Mosfets for Electric Drivetrains
16. Electron Channeling Contrast Imaging (ECCI) for Rapid Characterization of Compound Semiconductors.
17. Vertical Gallium Nitride MOSFETs for Electric Drivetrains.
18. Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes
19. (Invited) Advancements in Vertical GaN p-n Junction Structures Via p-Type Ion Implantation
20. AlGaN High Electron Mobility Transistor for High Temperature Logic.
21. Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes .
22. Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs.
23. Realization of Medium-Voltage Vertical GaN PiN Diodes (invited).
24. Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions
25. Highly Efficient Solar-Blind Single Photon Detectors
26. Progress in Fabrication and Characterization of Vertical GaN Power Devices (invited).
27. Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices
28. Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes
29. Recent Progress in Vertical Gallium Nitride Power Devices.
30. (Invited) Development of Vertical Gallium Nitride Power Devices for Use in Electric Vehicle Drivetrains
31. (Invited) Developments in Vertical GaN p-n Junction Structures Via p-Type Ion Implantation
32. (Invited) Vertical Gallium Nitride PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics
33. (Invited) AlGaN Transistors for Digital Logic Applications in High-Temperature Environments
34. Vertical GaN Devices for Medium-Voltage Power Electronics.
35. Vertical GaN PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics.
36. Development of Vertical GaN Power Devices for Use in Electric Vehicle Drivetrains (invited).
37. Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices.
38. Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
39. Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.
40. AlGaN Transistors for Digital Logic Applications in High-Temperature Environments.
41. Al0.7Ga0.3N MESFET With All-Refractory Metal Process for High Temperature Operation
42. Defect Spectroscopy and Reduced Compensation of UV Illuminated MOCVD n-type GaN.
43. Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates
44. High-resolution planar electron beam induced current in bulk diodes using high-energy electrons
45. Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes
46. AlGaN High Electron Mobility Transistor for Power Switches and High Temperature Logic.
47. Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates.
48. Deep-level Optical Spectroscopy in Wet-Treated Etched-and-Regrown Nonpolar m-plane GaN Vertical Schottky Diodes.
49. Identification of Star Defects in Gallium Nitride with HREBSD and ECCI
50. Structural Characterization of Dot-Core GaN Substrates with Annealing Under Growth-Like Conditions Using Synchrotron Monochromatic X-ray Topography
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