Search

At the end of 2022, my tenure as Editor-in-Chief of IEEE Electron Device Letters came to an end. For four years, it has been my greatest privilege to serve the electron devices community in this capacity. Working together with an outstanding Editorial Board, a most supportive Editorial Office, and a worldwide pool of dedicated reviewers, during this time we strived to rapidly bring to light some of the most noteworthy and relevant new developments in electron devices. It has been rewarding to see how EDL has become a premier venue for publication of the latest and most impactful advances in our field. Serving as EiC of EDL has been a treat because you get to witness up close the extraordinary creativity of our community and the exhilarating progress of our technologies for the benefit of humankind.

It is my pleasure to welcome Dr. Mina Rais-Zadeh to the Editorial Board of IEEE Electron Device Letters. A biography and picture of Dr. Rais-Zadeh can be found below. Her subject areas are compound semiconductor devices, materials, processing and packaging, sensors and actuators, and emerging technologies and devices

We used deep level transient spectroscopy (DLTS) and HR‐TEM techniques to study traps and defects in pre‐ and post‐stressed AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi‐insulating SiC substrates. DLTS identified two dominant traps with activation energies of 0.5 and 0.7 eV in both pre‐ and post‐stressed GaN HEMTs. Electrical stress resulted in a significant increase in the density of 0.5 eV traps. This is attributed to point defects (most likely N antisites) in the AlGaN barrier and clearly suggests that these traps play a critical role in degradation of the devices. Cross‐sectional TEM confirmed physical damage on the edge of the gate that was likely due to the inverse piezoelectric effect.

The increasing difficulties for further scaling down of Si CMOS is bringing to the fore the investigation of alternative channel materials. Among these, III-V compound semiconductors are very attractive due to their outstanding electron transport properties. This paper reviews the prospects and the challenges for a III-V transistor technology for Beyond-roadmap CMOS applications.