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1. Spectral Response of Metal-Semiconductor-Metal Photodetector Based on Black Silicon.

Author

Yuanjie, Su, Yadong, Jiang, Zhiming, Wu, and Guodong, Zhao

Subjects
SILICON, SEMICONDUCTORS, SPECTRAL sensitivity, OPTOELECTRONIC devices, TEMPERATURE effect, RAPID thermal processing, ELECTRIC potential
Abstract

Abstract: This paper reports the spectral responsivity of black silicon photodetector in a spectral range from 400nm to 700nm. According to the results, the responsivity of the detector annealed at temperature of 673K by Rapid Thermal Annealing (RTA), is 58.8 A/W at 670nm, which is nearly two orders of magnitude greater than the one without annealing treatment. Moreover, bias voltage plays another important role that greatly affects the spectral response of the photodetector. [Copyright &y& Elsevier]

Published
2011
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