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Recently, Far-infrared Light Emitting Diodes have attracted considerable interest in the research field worldwide. Emerging light therapy requires effective red/far-infrared light resources in clinical and plant photomorphogenesis to target or promote the interaction of light with living organisms. Here, Gd3Al4GaO12:Cr3+ (hereinafter referred to as: GAGG:Cr3+) phosphor was synthesized by high-temperature solid-phase method, and the crystal structure, morphology, and luminescence properties of this series of phosphor samples were studied. Through X-ray powder diffraction to obtain pure phase GAGG:Cr3+ series phosphor. Under the excitation of 420nm blue light, a broad band emission from 640 to 850nm is obtained, which is the result of the transition of Cr3+ 4T2→4A2 level. A sharp emission peak at 693nm is the R line belonging to Cr3+ in Gd3Al4GaO12 garnet. R line is assigned to the spin-forbidden 2E→4A2 transitions of Cr3+ ions that occupy the ideal octahedral sites. As the Cr3+ doping concentration increases, the luminous intensity of the sample increases first and then decreases. When the doping concentration of Cr3+ is 0.1mol phosphor,the luminous intensity is strongest at one single broad peak at about 712nm. At 440k, the R sharp line (693nm) and broad band (712nm) emission intensity maintained 78.6% and 71.8% , compared to room temperature intensity, respectively. The change of fluorescence lifetime at different temperatures gives the mechanism of fluorescence change with temperature. The current exploration will pave a promising way to engineer GAGG:Cr3+ activated optoelectronic devices for all kinds of photobiological applications.

Patients with stable coronary artery disease (CAD) are at an increased risk of acute myocardial infarction (AMI), particularly among older individuals. Developing a reliable model to predict AMI occurrence in these patients holds the potential to expedite early diagnosis and intervention. This study is aimed at establishing a circulating amino acid‐assisted model, incorporating amino acid profiles alongside clinical variables, to predict AMI risk. A cohort of 874 CAD patients from two independent centers was analyzed. Plasma amino acid levels were quantified using liquid chromatography tandem mass spectrometry (LC‐MS/MS) employing a targeted metabolomics approach. This methodology incorporated 13C isotope‐labeled internal standards for precise quantification of 27 amino acids. Univariate logistic regression was applied to identify differentially expressed amino acids that distinguished between stable CAD and AMI patients. To assess prediction performance, receiver operating characteristic (ROC) curve and nomogram analyses were utilized. Five amino acids—lysine, methionine, tryptophan, tyrosine, and N6‐trimethyllysine—emerged as potential biomarkers (p< 0.05), exhibiting significant differences in their expression levels across the two centers when comparing stable CAD with AMI patients. For AMI risk prediction, the base model, utilizing 12 clinical variables, achieved areas under the curve (AUC) of 0.7387 in the discovery phase (n= 623) and 0.8205 in the external validation set (n= 251). Notably, the integration of these five amino acids into the prediction model significantly enhanced its performance, increasing the AUC to 0.7651 in the discovery phase (Delong’s test, p= 1.43e‐02) and to 0.8958 in the validation set (Delong’s test, p= 8.91e‐03). In conclusion, the circulating amino acid‐assisted model effectively enhances the prediction of AMI risk among CAD patients, indicating its potential clinical utility in facilitating early detection and intervention.

The mean projected ranges and range straggling for energetic 200 – 500 keV Yb ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2012) calculations. It has been found that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .

Thermal and thermo-oxidative degradation of epoxidized natural rubber containing 25 mol % expoxidation (ENR25) with different four antioxidants were investigated by thermogravimetric analysis (TGA). The four antioxidants, viz., poly-2,2,4-trimethyl-1,2-dihydroqui- noline (RD), N-(1,3-dimethylbutyl)-N'-phenyl-p-phenylenedianine (4020), N-isopropyl-N'-phenyl- p-phenylenedi-amine (4010NA), and 2-mercaptobenzimidazole (MB) were used. The results indicate that the ENR25 vulcanizates with antioxidant 4020 or 4010NA is the optimal antioxidant for ENR25.

The crosslink density and tensile property of epoxidized natural rubber containing 25 mol % expoxidation (ENR25) with different four antioxidants was investigated. The four antioxidants, viz., poly-2,2,4-trimethyl-1,2-dihydroquinoline (RD), N-isopropyl-N'-phenyl-p-phenyl-enediamine (4010NA) , N-(1,3-dimethylbutyl)-N'-phenyl-p-phenylenedianine (4020) and 2-mercaptobenzimidazole (MB) were used. The results indicate that the ENR25 vulcanizates with antioxidant 4020 exhibit the higher crosslink density and tensile property, the best thermal oxidation aging resistance.

In order to study comparatively the effect of different rotor structure on variable speed constant frequency generation. The simulation performance comparisons between ALA reluctance rotor and cage rotor generator are presented in this paper by MATLAB software. It is indicated that ALA reluctance rotor and cage rotor exhibits fine variable speed constant frequency generation, however, the voltage harmonic of reluctance rotor generator is more than that of cage rotor generator.

The brushless doubly-fed machine (BDFM) is a new type of induction machine with good application in wind power generation. In this paper, the design method for the stator winding and rotor winding of BDFM in detail on the basis of operation principle of the machine is introduced. As an example, The performance simulation for a 480kW cage rotor BDFM with 8-pole stator power winding and 4-pole control winding can be considered under the condition of no-load, rated load and variable speed constant frequency operation based on field-circuit coupled finite element analysis. Simulation results show that the design method has good performance and is feasible in variable speed constant frequency wind generation systems.

The mean projected ranges and range straggling for energetic 200 – 500 keV Yb ions implanted in single crystal silicon (c-Si) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with Monte Carlo code (SRIM2010) predictions. Our results show that the measured values of the mean projected range Rp are good agreement with the SRIM calculated values; but the difference of the range straggling ΔRp between the experiment data and the calculated results is much higher than that of Rp.

ZnO waveguide films were fabricated on sapphire (001) and MgO (100) substrates by the radiofrequency (RF) magnetron sputtering technology using ZnO ceramic as the target. Properties of the films were investigated by prism coupling method, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). The results demonstrated that the ZnO nano-films have planar waveguide structure and have nearly stoichiometric composition with c-axis preferred orientation growth. The growth rates of the films were slightly influenced by the substrates. The effective refractive indices of the films were smaller than the bulk material and were affected by substrates. The relationships between the average grain sizes, substrates, and film thickness were analyzed.

Yb-doped ZnO optical waveguide thin films were deposited on sapphire substrates by radiofrequency (RF) magnetron sputtering technology, and then Er+ ions with the energy of 200 KeV were implanted into the as-deposited films, the implantation dose was 1×1015 ions/cm2. Optical waveguide properties and film thicknesses were studied by prism coupling method. Film thicknesses, element components and Er+ ions range distrbution were studied by Rutherford backscattering (RBS) technique. The basic structure and phase of the films were studied using X-ray diffraction (XRD). The properties of optical frequency upconwersion were investigated by fluorescence spectrometer. The results demonstrated that the Yb-doped ZnO films with Er-implantation have planar waveguide structure and the waveguide properties were changed compared with the virgin ZnO films. The effective refractive indices of the films decreasing with the amount of Yb-doped concentration increasing. Yb concentration in films associated with targets but more than that in them. The films shown the classic structure of c-axis preferred orientation. The compounds of Yb:Zn and Er:Zn were appeared in the films. Inspired the films by 980 nm laser in room temperature, stimulated optical emission between 300~720 nm was not observed.

Due to the need to reduce electronic device sizes, it is very important to consider the depth distribution of ions implanted into a crystalline target. The mean projected ranges and range straggling for energetic 200-500 keV Er ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2010) calculations. It has been found that the measured values of the mean projected range RP are good agreement with the SRIM calculated values; for the range straggling ΔRp, the difference between the experiment data and the calculated results is much higher than that of Rp.

For a give air flux, the higher speed the fanner is running, the smaller the fanner’s size is. It is also well known that for a given power, the higher the machine’s running speed, the smaller the machine’s size has. If the fanner is geared to a high speed machine directly, the fan set’s volume will be sharply decreased. However, the heat dissipation of the high speed machine becomes a serious problem also due to the small size and high power loss density. Therefore, how to estimate accurately the power losses and temperature rise is a key issue for the high speed machine design. In this paper, the power losses and temperature of high speed PM machine for a fanner application are thoroughly investigated. And the test results of a prototype fan set partly shown the validity of the calculation method.

The rotor under study is a PM rotor of a synchronous machine intended for operation at 60 000 rpm. It is well known that design of high speed permanent magnetic (PM) rotor is quite different from that of a normal PM rotor. The determination of the rotor structure and dimensions must take consideration of the strength, stiffness and the magnetic properties of the PM rotor. Based on the Riccati transfer method, the dynamic model of the rotor-bearing system has been established. Then the supporting stiffness of the magnetic bearing is estimated and the PM rotor’s critical speeds and the corresponding vibration modes have been found. A prototype has been built and some test results proved the correct of the calculation.

In view of the influence of the projected range, the range straggling, and the lateral deviation of ions in materials on the property of photoelectric integration devices fabricated by ion implantation, the mean projected ranges and range straggling for energetic 200 – 500 keV neodymium (Nd) ions implanted in silicon-on-insulator (SOI) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with Monte Carlo code (SRIM2006) predictions. Our results show that the measured values of the mean projected range Rp are good agreement with the SRIM calculated values; for the range straggling ΔRp, the difference between the experiment data and the calculated results is much higher than that of Rp.

The structures of tris(8-hydroxyquinoline) aluminum (Alq3) and its difluorinated derivatives were optimized for the ground state at the B3LYP/6-31G* level and for the excited-state at the CIS/6-31G* level. At the same time, the absorption and emission spectra based on the above structures were calculated by the time-dependent density functional theory (TD-DFT) using the PBE0 method with the 6-31G* set. A significant red shift was predicted for 3,5-difluoro-substituted Alq3 while a significant blue shift for 4,6-difluoro-substituted Alq3. In addition, the reorganization energies for electron carriers (λe) were predicted and it was found that the derivatives are potential materials for electron transport.

We investigate the effect of hyperfine interaction on magnetoresistance in nonmagenetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from hyperfine interaction-dependent spin precession picture. The magnetoresistance depends on initial spin orientation of electron to hole in electron-hole pairs. Increasing hyperfine interaction slows down change of the magnetoresistance with magnetic field. The field dependence, the sign and saturation value of the magnetoresistances are composite effects of recombination and dissociation rate constants of singlet and triplet electron-hole pairs.

In view of the influence of the projected range, the range straggling, and the lateral deviation of ions in materials on the property of device in the fabrication of photoelectric integration devices by ion implantation, the mean projected ranges and range straggling for energetic 200 – 500 keV Nd ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2006) calculations. It has been found that the measured values of the mean projected range Rp are good agreement with the SRIM calculated values; for the range straggling △Rp, the difference between the experiment data and the calculated results is much higher than that of Rp

Due to the need to reduce electronic device sizes, it is very important to consider the depth distribution of ions implanted into a crystalline target. The mean projected ranges and range straggling for energetic 150 – 500 keV Er ions implanted in single crystal silicon (c-Si) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with other experimental data for amorphous Si (a-Si) and Monte Carlo code (SRIM2006) predictions. Our results show that, although the experimental values for range and range straggling exceed the SRIM calculations, they are nevertheless consistent with trends that have been previously observed for a-Si.

Due to the need to reduce electronic device sizes, it is very important to consider the depth distribution of ions implanted into a crystalline target. The mean projected ranges and range straggling for energetic 200 – 500 keV Nd ions implanted in single crystal silicon (c-Si) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with Monte Carlo code (SRIM2006) predictions. Our results show that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .

It is very important to consider the distribution of range, range straggling and lateral spread of ions implanted into semiconductor materials in design and fabrication of semiconductor integration devices by ion implantation. The mean projected ranges and range straggling for energetic 200 – 500 keV Er ions implanted in silicon-on-insulator (SOI) were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2006) calculations. It has been found that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .

A method for characterizing the morphology property of ZnO film surface with Gaussian correlation is investigated. The parameters of root-mean-square roughness w and lateral correlation lengthξare introduced in Gaussian model to describe the correlation properties of the random film surfaces. In the experimental performance, ZnO thin films are grown on quartz glass and silicon substrates by the reactive radio-frequency magnetron sputtering method under different deposition pressure. The surface morphologies of the film surface are scanned by an atomic force microscopy. The height auto-correlation functions and root-mean-square roughness are obtained by using the numerical calculus method. Carried on the fitting with the Gaussian function to the height auto-correlation function data, the lateral correlation lengths are extracted to describe the statistical properties of ZnO thin film in mathematics with other parameters.

TiO2 thin films were deposited from Ti2¬O3, TiO2 and Ti3O5 source materials by e-beam. The refractive index and extinction coefficient of the films in the visible and near infrared（IR） region were measured. The structural and chemical properties of the films were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS). XRD measurements revealed that all the deposited films were amorphous. XPS analysis showed the films were stoichiometric TiO2. The AFM investigation confirmed that the surface roughness of the films was dependent on the deposition conditions.

ZnO thin films with a strong c-axis orientation have been successfully deposited on quartz glass substrates at room temperature by radio frequency (rf) magnetron sputtering technology. X-ray diffraction, Rutherford backscattering, and prism coupling method were used to investigate the structure and optical properties of ZnO thin films. X-ray diffraction results shown lower sputtering pressure is propitious to increasing the crystallinity, and enhancing the c-axis orientation of the films. Rutherford backscattering analysis revealed that the films were stoichiometric ZnO, and as the sputtering pressure decreasing, the deposition rate were increased from 0.758 3nm/min to 2.892 nm min for sputtering pressure in the range from 1.0Pa to 0.5Pa. Under the lower sputtering pressure (0.5Pa) condition, the results obtained by prism coupling method investigation confirmed that the effective refractive index of ZnO films (no=1.8456，ne=1.8276) at a wavelength of 633nm is more close to Crystal Refractive index.

The method of rotor position detection and its signal processing circuit for high speed permanent magnet synchronous motor (PMSM) are proposed in this paper. The optoelectronic position sensor and appropriate processing way are adopted to obtain position information accurately and rapidly. The experimental result shows that the method can accurately detect the rotor position for a PMSM with rated speed of 60000 r/min. The method is also applied on high speed PMSM direct torque control (DTC) system by simulation in this research. It is shown that the proposed method can be used for high speed PMSM which has provided theoretical basis for closed-loop control.

Dendritic cells (DCs) are potent antigen-presenting cells, and their physiological localization in tissues that interact with the external environment is important as a first barrier against pathogens such as human immunodeficiency virus type I (HIV-1). Several models have been proposed to explain the possible role of DCs as a reservoir for HIV-1 in patients on virally suppressive highly active antiretroviral therapy (HAART). However, the low yield of cell isolates has made this evaluation a difficult task. The present study analyzes whether peripheral blood DCs from HIV-1-infected individuals on virally suppressive HAART, with plasma HIV-1 RNA levels of less than 50 copies/ml, carry either HIV-1 provirus and/or HIV-1 virions. Peripheral blood DCs were isolated from a cohort of 10 HIV-1-seropositive men taking suppressive HAART. In five patients, plasmacytoid and myeloid dendritic cells were isolated to attempt to identify their respective roles in HIV-1 residual disease. Viral out-growth assays were performed in vitro, as well as gag and R/U5 polymerase chain reaction (PCR) amplification of viral RNA and DNA, respectively, from DC and peripheral blood mononuclear cell (PBMC) extracts. Fluorescence activated cell-sorting (FACS) data revealed cellular yields from 85.90 to 95.18%, of relatively pure DCs isolated from patients' PBMCs. Although HIV-1 RNA gag and DNA RU/5 were detected in all PBMC samples isolated from the patients, proviral DNA and viral RNA forms were not detected in any of the DC isolates. In addition, no replication-competent virus was demonstrated in DC coculture assays, while virus was isolated from each patients' CD8+ T-lymphocyte-depleted PBMC cocultures. Furthermore, HIV-1 gag proviral DNA was not detected in either plasmacytoid or myeloid DC subfractions. The current study suggests that in HIV-1-infected individuals treated with suppressive HAART, peripheral blood DCs do not carry HIV-1 proviral DNA or viral particles attached to their surface. These populations of peripheral blood DCs are likely not a major HIV-1 reservoir in patients on HAART with clinically undetectable plasma viral RNA.

The disorder profiles of Nb atoms in proton-exchanged X- and Z-cut LiNbO3 waveguides before and after annealing are obtained by Rutherford backscattering/channeling technique. Step-like disorder distributions are found in as-exchanged X-cut LiNbO3 waveguide regions. An increasing trend of disorder ratio with depth appears in as-exchanged Z-cut LiNbO3 waveguide regions. It is shown that the displacement of Nb atoms is larger along the c-axis than along the a-axis. After annealing, more than 70% of the total Nb atoms are in their original crystal lattice sites. The displacement of Nb atoms seems not to be the main reason for the decrease of the spontaneous polarization in proton-exchanged LiNbO3 waveguides.

We formed planar waveguides in LiNbO_3 and LiTaO_3 crystals by megaelectron volt He-ion implantation. The dark modes of both waveguides are measured and their refractive-index profiles are described according to the parameterized index profile reconstruction method. The extraordinary indices of both ion-implanted waveguides exhibit quite different profiles. We compare the thermal stability of barriers in ion-implanted LiNbO_3 and LiTaO_3 waveguides by annealing at different temperatures. The results show that the barrier in a LiTaO_3 planar waveguide has higher thermal stability than that in a LiNbO_3 waveguide. The experiments also show that annealing at a temperature higher than 400 °C results in recrystallization of the barrier.

The authors report the first ion implanted planar optical waveguide in the nonlinear and multifunctional crystal NdxY1-xAl3(BO3)4 (NYAB). The refractive index profiles are characterised for both no and ne. The index changes show that a typical barrier waveguide is formed in the implanted NYAB crystal and comparisons of the refractive index profiles before and after annealing are given. The damage in the crystal surface that was caused by the implantation of MeV He ions was investigated by using an RBS/channelling technique and there was some decrease in the damage of the surface of the crystal after annealing. The loss of the waveguide was measured before and after annealing.

The first H-ion implanted Cu-doped (K0.5Na0.5)0.2(Sr0.75Ba0.25)0.9Nb2O6crystal planar waveguide is reported in this paper. Low dose MeV H ion implantation into a crystal of KNSBN has been used to fabricate the waveguide by generating a buried layer of lowered refractive index. Both TE and TM modes are observed. The reconstructed refractive index profiles in the waveguide are obtained using a parametrized index profile reconstruction method. The simulated results of TRIM show that the nuclear collision influences most the ordinary index profile, but in the region of the guide the extraordinary index profile may be related to the electronic energy loss.

The first MeV hydrogen ion implanted waveguide in KTiOPO4is reported. The planar optical waveguide in KTiOPO4was fabricated by 1.0 MeV hydrogen ions to a dose of 2×1016ions/cm2at room temperature. The dark modes were observed by prism coupling. Both refractive index profiles before and after annealing show a typical barrier waveguide in KTiOPO4formed by 1.0 MeV hydrogen ion implantation. After annealing at 200°C for 30 min, a 0.4% decrease in the refractive index was observed. Loss is estimated to be less than 2.2 dB/cm.