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Skin aging is a systematic and complex process, mainly including intrinsic aging caused by time change and extrinsic aging caused by environmental factors. Photoaging caused by ultraviolet (UV) irradiation is the principle extrinsic factor of skin aging, which can directly or indirectly cause damage to DNA and other biomolecules, generate reactive oxygen species (ROS), and induce a decrease in collagen synthesis and other adverse effect. Herein, to address the causative factors and multiple side effects of skin photoaging, we constructed multifunctional peptide-melanin hybrid nanodots (PMHDs) to achieve multifaceted synergistic anti-skin aging by using melanin-like nanodots (MDs) and functional peptides as active motifs. Among them, the peptide has the activity of promoting collagen synthesis, while the MDs have the function of absorbing UV light and scavenging free radicals. Additionally, the MDs also act as a carrier to increase the cellular uptake of the peptide. The anti-photoaging effects of the PMHDs were systematically verified in a multidimensional manner at the biochemical, cellular and small animal levels, respectively.

The SiC trench gate lateral MOSFET featuring dual source trenches is proposed in this work. 2D numerical simulations by TCAD are conducted to study the performance and the reliability of the proposed structure and the conventional ones. With the trench gate, the device specific ON-resistance is reduced by more than 50% compared to that of the planar gate device. The device with proposed dual source trenches can also prevent the Pwell punch through problem that occurs in conventional lateral LMOS. As a result, a blocking voltage over 1200V can be achieved with the proposed structure. The proposed devices have two types of configurations. Compared with the configuration of double shallow trenches, the configuration of deep and shallow trenches can mitigate the curvature effect near the P+ source region by increasing the effective curvature radius. As a result, the RESURF doping and epi thickness windows are both expanded by $1.5{\times }$ . Furthermore, as the deep source trenches push the electric field away from the gate trench, the off-state oxide field is effectively reduced to below 3MV/cm. Thus, the long-term reliability is substantially improved. In addition, the deep and shallow source trench configuration provides the enhanced screen effect and hence lowers the gate charge by 50%. Faster switching can be achieved with this structure.

Supplemental Digital Content is Available in the Text.We aim to investigate whether genetic variants of the Fibrillin-1 (FBN1)gene were associated with DeBakey type III aortic dissection (AD) and its clinical prognosis in Chinese Han population. Three single-nucleotide polymorphisms (SNPs) (rs145233125, rs11070646, rs201170905) in FBN1were analyzed in patients with DeBakey type III AD (159) and healthy subjects (216). Gene–environment interactions were evaluated to use generalized multifactor dimensionality reduction. Haplotype analysis of the 3 SNPs in the FBN1gene was performed by Haploview software. Patients were followed up for average 4 years. G carriers of rs11070646 and rs201170905 in FBN1have an increased risk of DeBakey type III AD. The interaction of FBN1and environmental factors facilitated to the increased risk of DeBakey type III AD (cross-validation consistency = 10/10, P= 0.001). One of the most common haplotypes revealed an increased risk of DeBakey type III AD (CGG, P= 0.009). Recessive models of rs145233125 CC genotype (P< 0.05) and rs201170905 GG genotype (P< 0.001) were associated with an increased risk of death and recurrent chest pain of DeBakey type III AD. In conclusions, FBN1gene polymorphisms contribute to DeBakey type III AD susceptibility. The interactions of gene and environment are related with the risk of DeBakey type III AD. C carriers of rs145233125 and G carriers of rs201170905 may be the adverse prognostic indicators of death and recurrent chest pain in DeBakey type III AD.

We present a new chaotic times prediction model inspired by the bubble-net predation of whales. The echo state network (ESN) is a new type of recurrent neural network. However, selecting parameters empirically for the ESN cannot guarantee the accuracy of the prediction. The whale optimization algorithm (WOA) imitates the bubble-net predation of whales and ensures the rapid convergence of selecting network parameters. A new prediction model, WOA-ESN, in which the WOA and the ESN are incorporated, is proposed in this paper. In addition, a simplified cross-validation (CV) method is proposed to take into account the approximation performance and generalization ability of the WOA-ESN. In experiments, the WOA-ESN is used for Mackey-Glass and Lorenz chaotic time series predictions, and the results are compared with the ESN based on particle swarm optimization (PSO-ESN), the ESN based on genetic algorithm (GA-ESN), and ESN. The results show that the proposed model has the best prediction performance.

Al0.58Ga0.42N epilayers are grown by ammonia gas source molecular beam epitaxy (NH3-MBE) on (0001) sapphire substrate using AlGaN buffer layer. The effects of the buffer layer growth temperature on the properties of Al0.58Ga0.42N epilayer are especially investigated. In-situ high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), photoconductivity measurement and cathodoluminescence (CL) are used to characterize the samples. It is found that high growth temperature of AlGaN buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the Al0.58Ga0.42N epilayer. The likely reason for such improvements is also suggested. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)