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Cuprous oxide (Cu2O) films were formed by dc reactive magnetron sputtering onto glass substrates held at various temperatures in the range 303–648 K. The substrate temperature was found to be an important parameter in controlling the physical properties of the deposited films. The variation of cathode potential and deposition rate with the substrate temperature was studied. The dependence of crystallographic structure, electrical properties and optical absorption of the films on the substrate temperature was systematically investigated. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Cadmium oxide films were grown on glass substrates using d.c. reactive magnetron sputtering technique by sputtering from a metallic cadmium target in an oxygen partial pressure of 1×10−3mbar under various substrate bias voltages. The substrate bias voltage significantly influences the crystallographic structure of the deposited films. The influence of substrate bias voltage on the electrical and optical properties of the films was systematically studied. The films formed at a substrate temperature of 473 K and bias voltage of −80 V showed an electrical resistivity of 1×10−3Ω cm, optical transmittance of 86%, optical band gap of 2.47 eV and a figure of merit of 7×10−3Ω−1.

The parallel heat welding process has been proposed recently as an effective method of reducing process induced residual stresses. Extensive test data have been provided by previous authors to prove the efficacy of the process. To examine the feasibility of theoretically analysing the residual stresses in the parallel heat welding process, finite element analyses have been carried out and compared with the results obtained by previous authors.MST/1927