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Seaports face rising pressure in container stacking. Nations are endeavoring to get the most advantage from it, increase their portion of this area’s assets, and achieve their aspirations. Because of this increment, the ports experience the bad effects of numerous issues, including how to make the proper choice to store and extract different containers. In this paper, The method for stacking containers in a suitable location has been proposed in the maritime terminal in light of the speculation of time’s elements for choosing the ideal position for the container in the yard in light of the speculation of time’s elements for choosing the ideal position for the container in the yard. This method gives ideal capacity areas to organize containers by time to stay away from random scattering. The scattering of containers is not a solution to stacking because it causes retrieval issues. As well as to give more flexibility during work with the option of reorganizing containers that should be put away in the terminal to permit the arrangement of new stockpiling places that decrease time and working expenses. This work contributes to the decision about organizing the stacking of containers. We propose to apply artificial intelligence techniques to take an optimal decision for stacking the containers that have various departure dates in light of the fact that artificial intelligence algorithms read the data styles in the historical data and predict the optimal solution for new inputs.

Single-walled carbon nanotubes (SWCNTs) incorporated in indium tin oxide (ITO) were developed to fabricate transparent conductive thin films via a sol–gel spin coating technique. The fabricated thin films were annealed at 350 °C. The effects of incorporating SWCNTs and varying film thickness on crystal structure were systematically investigated by X-ray diffraction (XRD), Raman shift, surface elemental compositions, surface topography and roughness, optoelectronic characteristics, and mechanical properties. XRD results confirmed the body-centered cubic structure of indium oxide polycrystalline phase, indicating that the structural properties of the ITO films were not significantly altered by incorporating CNTs. The presence of CNTs in the ITO matrix was confirmed by analyses of Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and energy dispersive X-ray spectroscopy (EDX). FESEM images revealed the formation of SWCNTs/ITO nanoparticles, and the average crystallite size increased along with increasing film thickness. Electrical characteristics also improved as the film thickness increased. The lowest electrical resistivity (4.6 × 10–4Ω cm), as well as the highest carrier concentration (3.3 × 1020cm–3) and carrier mobility (41 cm2/V s) were achieved from the 320 nm thick film. However, the optical transparency decreased from 91 to 87.5% as the film thickness increased from 150 to 320 nm. The hardness and Young’s modulus of the prepared samples improved, with the increase of SWCNTs doping level, and achieved the maximum values of 28 and 306 GPa, respectively.