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We demonstrate electrostatic switching of individual, site-selectively generated matrices of single photon emitters (SPEs) in MoS2van der Waals heterodevices. We contact monolayers of MoS2in field-effect devices with graphene gates and hexagonal boron nitride as the dielectric and graphite as bottom gates. After the assembly of such gate-tunable heterodevices, we demonstrate how arrays of defects, that serve as quantum emitters, can be site-selectively generated in the monolayer MoS2by focused helium ion irradiation. The SPEs are sensitive to the charge carrier concentration in the MoS2and switch on and off similar to the neutral exciton in MoS2for moderate electron doping. The demonstrated scheme is a first step for producing scalable, gate-addressable, and gate-switchable arrays of quantum light emitters in MoS2heterostacks.