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4 results on '"Sachan V"'

1. Ordering of holes and spins in La2NiO4.125 and La1.8Sr0.2NiO4

Author

Tranquada, J.M., Buttrey, D.J., Lorenzo, J.E., and Sachan, V.

Abstract

Single-crystal neutron diffraction studies of La2NiO4.125 and La1.8Sr0.2NiO4 reveal evidence for a long-period-commensurate coupled ordering of spins and charges below approximately 110 K. Analysis of the superlattice peaks indicates that the dopant-induced holes order in domain walls that form antiphase boundaries between antiferromagnetic stripes.

Published
1995
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3. Integration of low permittivity dielectric in Al dual damascene architecture for low parasitic on-chip interconnect applications

Author

Zhao, B., Feiler, D., Liu, Q.Z., Nguyen, C.H., Brongo, M., Kuei, J., Ramanathan, V., Zhang, H., Wu, J., Rumer, M., Biberger, M.A., Sachan, V., and James, D.

Abstract

A low dielectric constant (low-κ) material has been successfully integrated in an Al dual damascene interconnect architecture where the low-κ dielectric (κ < 3) was used as the intra/inter level dielectric (ILD). In addition to a reduction in intra-level and inter-level capacitance, low via resistance, excellent electrical isolation and good reliability characteristics were observed.

Published
1998

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