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The single-event latch-up (SEL) cross section of a 16 nm bulk finFET programmable system-on-chip (SoC) is investigated by combining single-photon absorption (SPA) laser testing, emission microscopy (EMMI), and embedded instrumentation. The contributions of different SEL-sensitive areas identified by their current increase, light emission, and functional signatures are measured. The effect of temperature and IO bias is evaluated. The laser results show an excellent correlation with heavy ion data and delimit the origin of SEL in this device by excluding the occurrence of SEL in the core logic for this technology.