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1. High-voltage rf operation of AlGaN/GaN heterojunction FETs.

Author

M. Kuzuhara, H. Miyamoto, Y. Ando, T. Inoue, Y. Okamoto, and T. Nakayama

Subjects
ALUMINUM compounds, GALLIUM nitride, HETEROJUNCTIONS, EPITAXY, TRANSISTORS
Abstract

This paper reviews the present status of AlGaN/GaN heterojunction FETs for microwave and millimetre-wave applications. The epitaxial structure of the FET and its fabrication process are described. The dc and rf characteristics are also reported, including state-of-the-art power performance at 2 GHz and 30 GHz. The future prospects of GaN-based transistors are also discussed. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Published
2003
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