1. Effective Metal Work Function of Pt Gate Electrode in Ge Metal Oxide Semiconductor Device.
- Author
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Chandra, S. V. Jagadeesh, Mi-Ra Jeong, Kyu-Hwan Shim, Hyo-Bong Hong, Soo-Hyung Lee, Kwang-Soon Ahn, and Chel-Jong Choia
- Subjects
METAL oxide semiconductors ,ANNEALING of metals ,ELECTRODES ,SILICON ,HAFNIUM oxide ,DIELECTRICS ,ELECTRONEGATIVITY - Abstract
We fabricated Ge and Si metal oxide semiconductor devices with Pt/HfO
2 gate stacks and investigated their structural and electrical properties. Postmetallization annealing in O2 ambient reduced the accumulation capacitance more significantly in Si devices than in Ge devices due to the increase in the thickness of a low-k interfacial layer in between the HfO2 film and Si substrate. Ge devices exhibited lower effective work function values for a Pt gate electrode than Si devices owing to the presence of a large number of positively charged dipoles caused by a strong Fermi-level pinning at the Ge surface. [ABSTRACT FROM AUTHOR]- Published
- 2010
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