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Allogeneic hematopoietic stem cell transplantation (allo-SCT) is a potentially curative therapy for FLT3 internal tandem duplication mutant (FLT3-ITD+) acute myeloid leukemia, but relapse rate is high. A recent study showed that sorafenib, a first generation FLT3 and multikinase inhibitor, enhanced graft-versus-leukemia (GVL) effects against FLT3-ITD+leukemia via interleukin-15 (IL-15) production. However, it remains to be clarified whether this effect could be mediated by selective FLT3 inhibition. We investigated whether gilteritinib, a selective FLT3 inhibitor, could enhance GVL effects against FLT3-ITD transfected Ba/F3 leukemia (Ba/F3-FLT3-ITD) in mice. Oral administration of gilteritinib from day +5 to +14 after allo-SCT reduced expression of the co-inhibitory receptors PD-1 and TIGIT on donor CD8+T cells and enhanced IL-15 expression in Ba/F3-FLT3-ITD. Bioluminescent imaging using luciferase-transfected Ba/F3-FLT3-ITD demonstrated that gilteritinib significantly suppressed leukemia expansion after allo-SCT, whereas it did not impact the morbidity or mortality of graft-versus-host disease (GVHD), resulting in significant improvement of overall survival. In conclusion, short-term administration of gilteritinib after allo-SCT enhanced GVL effects against FLT3-ITD+leukemia without exacerbating GVHD.

Metal-assisted chemical etching is a novel method of etching a Ge surface in contact with a noble metal in water. Its basic mechanism involves the catalytic activity of metals to reduce dissolved O2 molecules in water, which accompanies the formation of a soluble oxide (GeO2) on the Ge surface around the metal. Here, we apply this electroless etching to the pit formation, nanoscale patterning and surface flattening of Ge. The fundamental etching properties for these three processes are also presented.

Silicon is etched by applying N-fluoropyridinium salts to its surface and exposing the surface to light. Etching depth increases with exposure time. The H-terminated hydrophobic Si is easier to be etched than the OH-terminated hydrophilic Si. SiF4 is produced by the photo-etching.

A photoetching method with -fluoropyridinium salts is proposed in this study. Si is etched by applying -fluoropyridinium salts to its surface and exposing the surface to light. The etched surface that uses liquid -fluoropyridinium salts is smoother than when solid -fluoropyridinium salts are used. The etching depth increases with exposure time. H-terminated hydrophobic Si is easier to etch than OH-terminated hydrophilic Si. is produced by photoetching. This suggests that -fluoropiridinium salts receive excited electrons from Si and supply Si with active F species.

Oncolytic vaccinia virus encoding IL-7 and IL-12 facilitates immune checkpoint blockade in treatment-resistant solid tumors.

Metal-assisted chemical etching is a novel method of etching a Ge surface in contact with a noble metal in water. Its basic mechanism involves the catalytic activity of metals to reduce dissolved O2molecules in water, which accompanies the formation of a soluble oxide (GeO2) on the Ge surface around the metal. Here, we apply this electroless etching to the pit formation, nanoscale patterning and surface flattening of Ge. The fundamental etching properties for these three processes are also presented.

We demonstrate that pyramidal etch pits composed of (111) micro facets are formed on single-crystalline Ge(100) surfaces when the Ge samples with metallic particles are immersed into water. The mechanism behind this anisotropic etching is the enhanced oxidation of Ge around metallic particles by the catalytic activity of noble metals to reduce dissolved oxygen (O2) to water molecules, and the subsequent removal of the oxide in water due to the soluble nature of Ge oxides. This enhanced etching of Ge surfaces is observed not only with metallic particles but also with a metallic thin film. The results insist that remaining metallic contaminants can roughen Ge surfaces during a rinse process with water, which will be important to design wet cleaning processes for Ge wafers.

A photoetching method with N-fluoropyridinium salts is proposed in this study. Si is etched by applying N-fluoropyridinium salts to its surface and exposing the surface to light. The etched surface that uses liquid N-fluoropyridinium salts is smoother than when solid N-fluoropyridinium salts are used. The etching depth increases with exposure time. H-terminated hydrophobic Si is easier to etch than OH-terminated hydrophilic Si. SiF4is produced by photoetching. This suggests that N-fluoropiridinium salts receive excited electrons from Si and supply Si with active F species.

Silicon is etched by applying N-fluoropyridinium salts to its surface and exposing the surface to light. Etching depth increases with exposure time. The H-terminated hydrophobic Si is easier to be etched than the OH-terminated hydrophilic Si. SiF4is produced by the photo-etching.