1. Understanding Substituent Effects on <SUP>29</SUP>Si Chemical Shifts and Bonding in Disilynes. A Quantum-Chemical Analysis
- Author
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Auer, D., Kaupp, M., and Strohmann, C.
- Abstract
The 29Si chemical shifts in substituted disilynes have been analyzed by quantum-chemical studies using a detailed breakdown of paramagnetic contributions into couplings of occupied and virtual canonical molecular orbitals. The results give indications of substituent effects on shielding and confirm the importance of energy denominators in the equation for σp in symmetrical substituted disilynes (H
3 SiSiSiSiH3 and H3 CSiSiCH3 ) on their chemical shifts. In the unsymmetrical substituted disilyne H3 CSiSiSiH3 the energy denominators are identical for both sites and thus cannot explain the widely different chemical shifts. It turns out that the asymmetric charge distribution (reflected in both occupied and virtual MOs and sampled by the PSO matrix elements) allows more efficient couplings at the methyl-substituted silicon side. Furthermore, shielding values in disilynes depend strongly on the size of the trans-bent angle ϕ, as indicated clearly by analyses of the 29Si chemical shifts in the model H3 SiSiSiSiH3 at selected values of ϕ. Small changes in ϕ influence the 29Si shielding values appreciably. At lower values of ϕ, couplings between bonding and virtual MOs exhibit stronger deshielding caused by significantly lower energy denominators.- Published
- 2005