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Correlated transparent conducting oxides (TCOs) have gained great attention, because of their unique combination of transparency and metallic character. SrVO3(SVO) was identified as a high-performance TCO in the visible range. Few studies have investigated band structure engineering through chemical doping to enhance the optical properties of SVO. Here, we use two different strategies by exploiting the band-filling and width of the bands derived from Vanadium to tune the screened plasma frequency ωp*and the interband transition Ep–denergy, corresponding to the optical transparency window edges. For control of the band-filling strategy, it is found that Titanium doped SVO has a wide transparency window, but such a composition does not maintain the high electrical conductivity required for TCO applications. Concerning the bandwidth strategy, the doping of SrVO3by Calcium shows that ωp*remains located in the IR range (1.12 eV), while Ep–dis blue-shifted into the UV region (3.43 eV) due to reinforced electronic correlations. By an appropriate choice of dopant, we successfully increased the size of the transparency window by around 11% from 1.94 eV (SVO) to 2.30 eV (Calcium-doped SVO), while retaining high conductivity of around 2.30 × 104(S·cm–1) and high charge carrier density of 2.93 × 1022cm–3.

We have probed the structural and magnetic properties of PrVO3(PVO) thin films grown on the (001)-, (110)-, and (111)-oriented SrTiO3(STO) substrates. By changing the substrate orientation, the film out-of-plane orientation can be tuned to [110], [100]/[010], and [011]/[311], with different in-plane crystallographic variants. Accommodation of these variants on the different substrates implies different strain states, which have direct influence on the magnetic properties of PVO films. The magnetic moment of PVO films radically enhances from 0.4 μB/f.u. for STO(001) to 2.3 μB/f.u. for STO(111). While films on the (001)-oriented STO substrate display out-of-plane anisotropy, an in-plane anisotropy is observed for films grown on the (110)- and (111)-oriented STO substrates. In addition, a strong uniaxial magnetic anisotropy is also extracted for a partially relaxed film on the (110)-oriented STO substrate. Such findings can help oxide community for the better understanding of magnetic anisotropy in vanadate thin films, a subject that still suffer from significant lack of scientific investigations.

The integration of functional thin film materials with adaptable properties is essential for the development of new paradigms in information technology. Among them, complex oxides with perovskite structures have huge potential based on the particularly vast diversity of physical properties. Here, we demonstrate the possibility of transferring perovskite oxide materials like SrTiO3onto a silicon substrate using an environmentally friendly process at the nanoscale by means of a water-soluble perovskite sacrificial layer, SrVO3. Based on in situ monitoring atomic force microscopy and photoemission studies, we reveal that the dissolution is initiated from a strontium-rich phase at the extreme surface of SrVO3. The nanothick SrTiO3-transferred layer onto silicon presents appropriate morphology and monocrystalline quality, providing a proof of concept for the integration and development of all-perovskite-oxide electronics or “oxitronics” onto any Si-based substrate.

New paradigms are required in microelectronics when the transistor is in its downscaling limit and integration of materials presenting functional properties not available in classical silicon is one of the promising alternatives. Here, we demonstrate the possibility to grow La0.67Sr0.33MnO3(LSMO) functional materials on amorphous substrates with properties close to films grown on single-crystalline substrates using a two-dimensional seed layer. X-ray diffraction and electron backscatter diffraction mapping demonstrate that the Ca2Nb3O10–nanosheet (NS) layer induces epitaxial stabilization of LSMO films with a strong out-of-plane (001) texture, whereas the growth of LSMO films on uncoated glass substrates exhibits a nontextured polycrystalline phase. The magnetic properties of LSMO films deposited on NS are similar to those of the LSMO grown on SrTiO3single-crystal substrates in the same conditions (which is used as a reference in this work). Moreover, transport measurements take advantages of the texture and polycrystalline properties to induce low-field magnetoresistance at low temperature and also a high value of 40% magnetoresistance from 10 to 300 K, making it interesting for sensor applications. Therefore, the NS seed layer offers new perspectives for the integration of functional materials grown at moderate temperatures on any substrate, which will be the key for the development of oxitronics.

SrVO3(SVO) is a prospective candidate to replace the conventional indium tin oxide (ITO) among the new generation of transparent conducting oxide (TCO) materials. In this study, the structural, electrical, and optical properties of SVO thin films, both epitaxial and polycrystalline, are determined during and after heat treatments in the 150–250 °C range and under ambient environment in order to explore the chemical stability of this material. The use of these relatively low temperatures speeds up the natural aging of the films and allows following the evolution of their related properties. The combination of techniques rather sensitive to the film surface and of techniques sampling the film volume will emphasize the presence of a surface oxidation evolving in time at low annealing temperatures, whereas the perovskite phase is destroyed throughout the film for treatments above 200 °C. The present study is designed to understand the thermal degradation and long-term stability issues of vanadate-based TCOs and to identify technologically viable solutions for the application of this group as new TCOs.

We have studied the influence of the argon cluster ion sputtering technique in the X-ray photoelectron spectroscopy (XPS) depth-profiling analysis of a strontium titanate SrTiO3(STO) substrate, chosen as a prototype perovskite-type oxide material. Unlike “standard” sputtering technique using monatomic ions, a gentle digging through STO (without inducing a large amount of defects) has been evidenced. Several improvements are evidenced by using this low-energy abrasion process: (i) the absence of argon implantation, (ii) the creation of very few oxygen vacancies which lead in the classical way to the lowering of oxidation states of titanium and the appearance of in-gap electronic states, and (iii) the preservation of the cationic stoichiometry. In addition, electrical measurements confirm that no metal–insulator transition is evidenced using the cluster ion source, unlike the case of the monatomic ion etching. Furthermore, for the latter case, a relaxation effect of the Ar+ion induced electronic properties has been evidenced by combining XPS and transport measurements. Due to its unique depth-profiling features, the cluster ion sputtering technique offers new insights in the chemical and physical analysis of sensitive oxide surfaces and buried interfaces as in oxide heterostructures and superlattices.