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We have evaluated the effects of device geometry and frequency on DCIV and ACIV (charge pumping) currents in development-stage SOI finFETs with floating bodies that are built in two process technologies. Both the DCIV and ACIV currents are much smaller in devices for which the gate length exceeds ~100 nm or the fin width exceeds ~70 nm. ACIV currents are approximately linear with frequency up to ~300 kHz for the devices and measurement conditions used in this study. ACIV estimates of effective interface-trap densities for relatively short-channel, narrow-fin devices in each technology are ~4 × 1011cm-2.