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In-situhigh resolution transmission electron microscopy (HRTEM) with a hot-stage holder was used to observe the initial reaction process between molten Ag-Cu-Ti and SiC at the atomic level. In the region in contact with the molten alloy, SiC tended to dissolve along the (0001) plane. The reaction product adjacent to SiC was TiC at the nominal temperature of 1123 K and TiC formed epitaxially on the basal planes of SiC in the liquid phase. The TiC growth process is the rate-determining step, and when the SiC dissolution rate increases, the TiC nanoparticles remain in the liquid phase. It was observed that TiC nanoparticles grew and joined together to form coarser particles.

In-situ high resolution transmission electron microscopy (HRTEM) with a hot-stage holder was used to observe the initial reaction process between molten Ag-Cu-Ti and SiC at the atomic level. In the region in contact with the molten alloy, SiC tended to dissolve along the (0001) plane. The reaction product adjacent to SiC was TiC at the nominal temperature of 1123 K and TiC formed epitaxially on the basal planes of SiC in the liquid phase. The TiC growth process is the rate-determining step, and when the SiC dissolution rate increases, the TiC nanoparticles remain in the liquid phase. It was observed that TiC nanoparticles grew and joined together to form coarser particles.

Sublattice reversal in III-V compound semiconductors grown on group-IV epitaxial layers on III-V substrates has been proposed for fabricating nonlinear optical devices with domain-inverted compound semiconductor structures. Sublattice reversal epitaxy is demonstrated in the GaAs/Si/GaAs (100) system and confirmed by reflection high energy electron diffraction, cross-sectional transmission electron microscopy, anisotropic etching, and optical second-harmonic generation measurements. The present sublattice reversal seems to be assisted by self annihilation of antiphase domains generated at GaAs/Si interfaces.