1. Single-Source MOCVD of Fe/Sn Alloy Thin Films
- Author
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Chi, K.-M., Liu, S.-H., and Chien, S.-H.
- Abstract
Two organometallic compounds containing an Fe−Sn bond, CpFe(CO)
2 (SnMe3 ) (Cp: η5-cyclopentadienyl) and cis-Fe(CO)4 (SnMe3 )2 , have been used as single-source low-pressure CVD precursors to grow Fe/Sn alloy thin films at 300−420 °C. Deposited films were characterized by various surface analytical techniques. Electron probe microanalyses show that Fe and Sn elements are evenly distributed in the films. X-ray powder diffraction patterns indicate that these are polycrystalline films. Polycrystalline FeSn films have been successfully prepared from CpFe(CO)2 (SnMe3 ) with the deposition rates of 78−175 Å/min. The films composed of FeSn2 phase with a minor constituent of FeSn were obtained by using cis-Fe(CO)4 (SnMe3 )2 as precursor and the deposition rates were 130−330 Å/min.- Published
- 2002
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