66 results on '"Zavarin, E. E."'
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2. A GaN/AlGaN Resonance Bragg Structure
3. Critical Disorder in InGaN/GaN Resonant Bragg Structures
4. Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells
5. The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE
6. Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
7. Insulating GaN Epilayers Co-Doped with Iron and Carbon
8. Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
9. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
10. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
11. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
12. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
13. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
14. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
15. Elastic strains and delocalized optical phonons in AlN/GaN superlattices
16. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
17. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
18. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
19. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
20. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
21. MOVPE of III-N LED structures with short technological process
22. Optical lattices of excitons in InGaN/GaN quantum well systems
23. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
24. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
25. X-ray diffraction study of short-period AlN/GaN superlattices
26. Resonance Bragg structure with double InGaN quantum wells
27. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
28. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
29. InGaN/GaN heterostructures grown by submonolayer deposition
30. Monolithic white LEDs: Approaches, technology, design
31. Specific features of gallium nitride selective epitaxy in round windows
32. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
33. Study of tunneling transport of carriers in structures with an InGaN/GaN active region
34. Formation of composite InGaN/GaN/InAlN quantum dots
35. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
36. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
37. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
38. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
39. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
40. Indium-rich island structures formed by in-situ nanomasking technology
41. Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions
42. Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers
43. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs
44. Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen
45. Energy characteristics of excitons in structures based on InGaN alloys
46. Photoluminescence of localized excitons in InGan quantum dots
47. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
48. The study of lateral carrier transport in structures with InGaN quantum dots in the active region
49. Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy
50. Thermal-field forward current in GaN-based surface-barrier structures
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