87 results on '"Tsatsul’nikov, A. F."'
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2. Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates
3. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
4. Photonic-crystal waveguide for the second-harmonic generation
5. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
6. Resonance Bragg structure with double InGaN quantum wells
7. Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field
8. Formation of composite InGaN/GaN/InAlN quantum dots
9. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
10. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes
11. Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions
12. Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix
13. Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen
14. InGaN nanoinclusions in an AlGaN matrix
15. Energy characteristics of excitons in structures based on InGaN alloys
16. Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD
17. Photoluminescence of localized excitons in InGan quantum dots
18. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
19. The study of lateral carrier transport in structures with InGaN quantum dots in the active region
20. Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy
21. The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm
22. A study of carrier statistics in InGaN/Gan LED structures
23. Kinetics and inhomogeneous carrier injection in InGaN nanolayers
24. Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−x As matrix on a GaAs substrate
25. Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition
26. Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix
27. Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system
28. Structural and optical properties of InAs quantum dots in AlGaAs matrix
29. Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix
30. High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates
31. Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures
32. The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
33. 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them
34. The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm
35. Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range
36. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
37. Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
38. Mbe Growth, Structural and Optical Characterization of InAs/InGaAlAs Self-Organized Quantum Dots
39. MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots
40. Heteroepitaxial growth of InAs on Si: A new type of quantum dot
41. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
42. Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
43. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
44. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition
45. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
46. Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
47. Gain in injection lasers based on self-organized quantum dots
48. Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates
49. Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
50. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
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