34 results on '"Foxon, C. T."'
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2. Growth and transport properties of p-type GaNBi alloys
3. Efficient near IR photoluminescence from gallium nitride layers doped with arsenic
4. The growth of high quality GaMnAs films by MBE
5. The Influence of Substrate Polarity on the Blue Emission from As-doped GaN Layers Grown by Molecular Beam Epitaxy
6. Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy
7. TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate
8. Manifestation of collective properties of spatially indirect excitons in GaAs/AlGaAs asymmetric double quantum wells
9. Exafs Studies of Group III-Nitrides
10. Study of GaN thin layers subjected to high-temperature rapid thermal annealing
11. The current status of plasma assisted MBE growth of group III-nitrides
12. A Tem Study of the Microstructural Evolution of MBE-Grown GaN
13. A Combined TEM/RHEED, SEM/CL Study of Epitaxial GaN
14. Luminescence of excitons in slightly asymmetric double quantum wells
15. Book reviews
16. Giant growth of quantum oscillations in an inhomogeneous 2D electron system
17. The growth and properties of mixed group V nitrides
18. Single electron charging effects in semiconductor quantum dots
19. Quantized current in a quantum dot turnstile
20. Refractive indices of (AlAs)(GaAs) short-period superlattices
21. Far infrared measurements of bulk and surface phonons in GaAs/AlAs superlattices
22. Nanorods as a precursor for high quality GaN layers
23. Anomalous influence of magnetic field on the indirect exciton in GaAs/AlGaAs double quantum wells
24. Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping
25. Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
26. Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
27. Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)]
28. Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)]
29. Thermal desorption spectroscopy of condensed lead films on {100} GaAs surfaces
30. Fir spectroscopy on shallow donor states in GaAs:Si
31. Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs
32. Millimeter and submillimeter detection using Ga1−xAlxAs/GaAs heterostructures
33. Silicon migration during MBE growth of doped (A1, Ga)As films
34. Beryllium diffusion across GaAs/(Al, Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth
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