69 results on '"la Via, F"'
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2. Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers
3. Partially depleted operation of 250 μm-thick silicon carbide neutron detectors
4. Advanced approach of bulk (111) 3C-SiC epitaxial growth
5. Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)
6. Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars
7. Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons
8. On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
9. New thick silicon carbide detectors: Response to 14 MeV neutrons and comparison with single-crystal diamonds
10. 3C-SiC grown on Si by using a Si1-xGex buffer layer
11. Nuclear fragment identification with [formula omitted]E-E telescopes exploiting silicon carbide detectors
12. Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
13. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
14. Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers
15. Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures
16. Carbonization and transition layer effects on 3C-SiC film residual stress
17. Photocatalytical activity of amorphous hydrogenated TiO2 obtained by pulsed laser ablation in liquid
18. Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(0 0 1) for high-power MOSFET applications
19. Large area optical characterization of 3 and 4 inches 4H–SiC wafers
20. Stress fields analysis in 3C–SiC free-standing microstructures by micro-Raman spectroscopy
21. Morphology and distribution of carbon nanostructures in a deposit produced by arc discharge in liquid nitrogen
22. Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC
23. High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates
24. Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins
25. 4H-SiC epitaxial layer growth by trichlorosilane (TCS)
26. Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study
27. Point defect production efficiency in ion irradiated 4H–SiC
28. Temperature dependence of the c-axis drift mobility in 4H–SiC
29. Structural characterization and oxygen concentration profiling of a Co/Si multilayer structure
30. Time resolved study on Co/Ni/a-Si phase transition during isothermal annealing at 400 °C
31. Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?
32. C49 defect influence on the C49–C54 transition
33. First stages of silicidation in Ti/Si thin films
34. Thermal oxidation of As and Ge implanted Si( [formula omitted])
35. C49–C54 phase transition in nanometric titanium disilicide nanograins
36. Origin of the C49–C54 volume anomaly in TiSi 2 thin films: an in-situ XRD and TEM analysis
37. Electrical properties of TiSi 2 clusters in poly Si
38. Study of CoSi 2 thermal stability improved by interfacial cavities
39. Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide
40. Effects of a Ta interlayer on the titanium silicide reaction: C40 formation and scalability of the TiSi 2 process
41. Correlation between microstructure control, density and diffusion barrier properties of TiN(O) films
42. TEM analysis of an additional metal-rich component at the C49–C54 transformation in Ti/Si thin films capped with TiN
43. Oxidation of ion implanted silicon carbide
44. Improvement of high temperature stability of nickel contacts on n-type 6H–SiC
45. Dopant profile measurements in ion implanted 6H–SiC by scanning capacitance microscopy
46. Structural characterisation of titanium silicon carbide reaction
47. Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate and their thermal stability
48. Effect of a thin Ta layer on the C49–C54 transition
49. Structural investigations of the C49–C54 transformation in TiSi 2 thin films
50. Kinetics of the C49–C54 transformation by micro-Raman imaging
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