78 results on '"Zheng Youdou"'
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2. Chemiresistive room temperature H2S gas sensor based on MoO3 nanobelts decorated with MnO2 nanoparticles
3. A theoretical study on dopants substituted on the H-terminated surface regulating the threshold concentration of nitrogen for accelerating diamond growth
4. A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure
5. UV-activated CuO nanospheres modified with rGO nanosheets for ppb-level detection of NO2 gas at room temperature
6. Research of a weak negative thermal quenching effect of nitrogen vacancy centers in nitrogen-doped diamond
7. Over 10 kA/cm2 inductive current sustaining capability demonstrated in GaN-on-GaN pn junction with high ruggedness
8. Light-activated ultrasensitive NO2 gas sensor based on heterojunctions of CuO nanospheres/MoS2 nanosheets at room temperature
9. Stable pH sensitivity of LaAlO3/SrTiO3 interfacial electronic gas
10. Development of p-i-n radiation detectors based on semi-insulating 4H-SiC substrate via dual-face ion implantation
11. Facile synthesis of mesoporous CdS/PbS/SnO2 composites for high-selectivity H2 gas sensor
12. A room-temperature NO2 gas sensor based on CuO nanoflakes modified with rGO nanosheets
13. Pure-phase κ-Ga2O3 layers grown on c-plane sapphire by halide vapor phase epitaxy
14. Hydrogen gas sensor based on SnO2 nanospheres modified with Sb2O3 prepared by one-step solvothermal route
15. 2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure
16. Preparation of vertically aligned GaN@Ga2O3 core-shell heterostructured nanowire arrays and their photocatalytic activity for degradation of Rhodamine B
17. Different-sized CdTe QDs on the detection of Cu2+ ions: Combining experimental investigation with first-principles verification
18. Porous single-crystal GaN films obtained by direct top-down nitridation of bulk and film β-Ga2O3
19. Early stage of Cs activation mechanism for In0.53Ga0.47As (0 0 1) β2 (2 × 4) surfaces: Insights from first-principles calculations
20. Influence of high Mg doping on the microstructural and opto-electrical properties of AlGaN alloys
21. AlGaN/GaN heterostructure pH sensor with multi-sensing segments
22. Study of GaN nanorods converted from β-Ga2O3
23. InGaN nanocolumn growth self-induced by in-situ annealing and ion irradiation during growth process with molecular beam epitaxy method
24. Kinetic Monte Carlo study on the evolution of silicon surface roughness under hydrogen thermal treatment
25. Shape-Evolution Control of hybrid perovskite CH3NH3PbI3 crystals via solvothermal synthesis
26. Morphological evolution and characterization of GaN pyramid arrays fabricated by photo-assisted chemical etching
27. The compositional, structural, and magnetic properties of a Fe3O4/Ga2O3/GaN spin injecting hetero-structure grown by metal-organic chemical vapor deposition
28. The roles of buffer layer thickness on the properties of the ZnO epitaxial films
29. Effects of indium doping on the crystallographic, morphological, electrical, and optical properties of highly crystalline ZnO films
30. Selective area epitaxy of semipolar InGaN/GaN multiple quantum wells on GaN microfacets using crossover stripe patterns
31. Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by tailoring polarization in electron blocking layer
32. The study of near-resonance Raman scattering of AlInN/AlN/GaN heterostructure
33. Study on interface characteristics in amorphous indium–gallium–zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements
34. Zinc vacancy related emission in homoepitaxial N-doped ZnO microrods
35. Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy
36. Hydrogen diffusion behavior and its effect on magnetic properties in (Mn, N)-codoped ZnO
37. Influence of thermal annealing on electrical and optical properties of indium tin oxide thin films
38. Annealing temperature dependence of the structures and properties of Co-implanted ZnO films
39. Metal-semiconductor-metal ultraviolet photodetectors directly fabricated on semi-insulating GaN:Fe template grown by hydride vapor phase epitaxy
40. Influences of the type of dopant and substrate on ferromagnetism in ZnO:Mn
41. Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN
42. Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate
43. Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface
44. Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors
45. High rate deposition of microcrystalline silicon films using jet-type inductively coupled plasma chemical vapor deposition
46. Investigation of optical properties of InGaN–InN–InGaN/GaN quantum-well in the green spectral regime
47. Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes
48. Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis
49. Influences of unintentionally doped carbon on magnetic properties in Mn–N co-doped ZnO
50. Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress
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