56 results on '"Zheng, Y.D."'
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2. Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells
3. Characteristics of nanoporous InGaN/GaN multiple quantum wells
4. Temperature dependent growth of InGaN/GaN single quantum well
5. Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets
6. Experimental investigation on the upconversion mechanism of 754 nm NIR luminescence of Ho3+/Yb3+:Y2O3, Gd2O3 under 976 nm diode laserexcitation
7. Ultraviolet emission efficiencies of Al xGa 1 − x N films pseudomorphically grown on Al yGa 1 − y N template (x < y) with various Al-content combinations
8. Enhancing upconversion emissions of NaTm 0.02Yb xY 0.98− xF 4 nanocrystals through increasing Yb 3+ doping
9. Rashba spin splitting for the first two subbands in [formula omitted] heterostructures
10. The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition
11. Ferromagnetic Fe 3N films grown on GaN(0 0 0 2) substrates by MOCVD
12. In vitro biological performance of nano-particles on the surface of hydroxyapatite coatings
13. Rapid thermal annealing induced changes on the contact of Ni/Au to N-doped ZnO
14. Effect of NH 3 flow rate on growth, structure and luminescence of amorphous silicon nitride films by electron cyclotron resonance plasma
15. Al incorporation, structural and optical properties of Al xGa 1−xN (0.13⩽ x⩽0.8) alloys grown by MOCVD
16. High temperature dehydrogenation for realization of nitrogen-doped p-type ZnO
17. Temperature dependence of strain in Al 0.22Ga 0.78N/GaN heterostructures with and without Si 3N 4 passivation
18. Modeling analysis of the MOCVD growth of ZnO film
19. The high mobility InN film grown by MOCVD with GaN buffer layer
20. High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD
21. The template effects on AlN/Al 0.3Ga 0.7N distributed Bragg reflectors grown by MOCVD
22. Study of structure and magnetic properties of Ni-doped ZnO-based DMSs
23. Characterization of 4H-SiC grown on AlN/Si(100) by CVD
24. Study of structures and magnetic properties of single crystalline HVPE–GaMnN films
25. The solubility of phosphorus in GaN
26. Structural evolution of SiN x films deposited by ECR and its light emission
27. A novel In xGa 1− xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
28. Nonvolatile memory based on Ge/Si hetero-nanocrystals
29. SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(1 1 1) substrates
30. Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer
31. Research on the Mn-implanted GaN with ferromagnetism at room temperature
32. Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-Al xGa 1− xN/GaN heterostructures
33. Study on the AlN/Si [formula omitted] interface properties
34. Subbands transport of the two-dimensional electron gas in Al xGa 1− xN/GaN heterostructures
35. Characterization of GaN 1− xP x alloys grown by metal-organic chemical vapor deposition
36. Effect of surface treatments on Schottky contact on n-Al xGa 1− xN/GaN heterostructures
37. Investigation of the crystal tilts in laterally epitaxial overgrowth GaN films formed by hydride vapor phase epitaxy
38. High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition
39. Growth and photocurrent property of GaN/anodic alumina/Si
40. Study of wing tilt in asymmetrically and laterally overgrowth of thick GaN films
41. GaN 1− xP x ternary alloys with high P composition grown by metal-organic chemical vapor deposition
42. Study of moiré fringes at the interface of GaN/α-Al 2O 3 (0 0 0 1)
43. Growth of high quality GaN layers with AlN buffer on Si(1 1 1) substrates
44. Observation of compensation in GaN films grown by metalorganic chemical vapor deposition
45. Simulation of electron storage in Ge/Si hetero-nanocrystal memory
46. Dynamics of tunneling into charge-tunable Si quantum dots
47. Deposition and crystallization of amorphous GaN buffer layers on Si(1 1 1) substrates
48. Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phases of SrTiO 3 epitaxial thin films
49. The LiNbO3 thin films deposited on the Al0.28Ga0.72N/ GaN substrate
50. Circular photogalvanic effect at inter-band excitation in InN
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