19 results on '"Rooyackers, R."'
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2. Nanoprober-based EBIC measurements for nanowire transistor structures
3. Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs
4. Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs
5. Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
6. Drive current enhancement in p-tunnel FETs by optimization of the process conditions
7. Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
8. Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
9. Multi-gate devices for the 32 nm technology node and beyond
10. Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth
11. Spacer defined FinFET: Active area patterning of sub-20 nm fins with high density
12. Evaluation of triple-gate FinFETs with SiO 2–HfO 2–TiN gate stack under analog operation
13. Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions
14. Shift and ratio method revisited: extraction of the fin width in multi-gate devices
15. Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p–n junction diodes
16. Lifetime study in advanced isolation techniques
17. The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures
18. Investigation of stress in shallow trench isolation using UV micro-Raman spectroscopy
19. Stress variation across arrays of lines and its influence on LOCOS oxidation
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