103 results on '"Priolo F."'
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2. Spectroscopic and structural properties of polycrystalline Y2Si2O7 doped with Er3+
3. Changing the flux flow state in weak pinning superconducting films
4. Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy
5. Role of point defects on B diffusion in Ge
6. Synthesis and characterization of light emitting Eu2O3 films on Si substrates
7. Role of self-interstitials on B diffusion in Ge
8. Fluorine in Ge: Segregation and EOR-defects stabilization
9. Influence of the electro-optical properties of an α-Si:H single layer on the performances of a pin solar cell
10. Radiation enhanced diffusion of B in crystalline Ge
11. New approaches for enhancing light emission from Er-based materials and devices
12. He implantation induced nanovoids in crystalline Si
13. Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon
14. Atomistic modeling of F nV m complexes in pre-amorphized Si
15. Magnetic response of Mn-doped amorphous porous Ge fabricated by ion-implantation
16. He implantation in Si for B diffusion control
17. Light emitting devices based on silicon nanostructures
18. Electrical and structural characterization of Fe implanted GaInP
19. Carrier concentration and mobility profiling in quantum wells by scanning probe microscopy
20. Surface morphology of Mn + implanted Ge(1 0 0): A systematic investigation as a function of the implantation substrate temperature
21. Point defect engineering in preamorphized silicon enriched with fluorine
22. B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions
23. Ion beam analyses and electrical characterization of substitutional Fe properties in Fe implanted InP
24. Study of the Si-nanocluster to Er 3+ energy transfer dynamics using a double-pulse experiment
25. Incorporation of active Fe impurities in GaInP by high temperature ion implantation
26. Fluorine incorporation during Si solid phase epitaxy
27. Nanometer-scale spatial inhomogeneities of the chemical and electronic properties of an ion implanted Mn–Ge alloy
28. The influence of substrate on the properties of Er 2O 3 films grown by magnetron sputtering
29. Interaction between implanted fluorine atoms and point defects in preamorphized silicon
30. Correlation between electroluminescence and structural properties of Si nanoclusters
31. Time dependence and excitation spectra of the photoluminescence emission at 1.54 μm in Si-nanocluster and Er co-doped silica
32. Study of the energy transfer mechanism in different glasses co-doped with Si nanoaggregates and Er 3+ ions
33. Site of Er ions in Er-implanted silica containing Si nanoclusters
34. Submicron confinement effect on electrical activation of B implanted in Si
35. Dissolution kinetics of B clusters in crystalline Si
36. Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology
37. Boron-interstitial clusters in crystalline silicon: stoichiometry and strain
38. Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy
39. Electroluminescence properties of SiO x layers implanted with rare earth ions
40. Annealing behavior of high temperature implanted Fe impurities in n-InP
41. Self-interstitial diffusion and clustering with impurities in crystalline silicon
42. Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP
43. Er doped Si nanostructures
44. Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy
45. New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon
46. Local structure of iron implanted in indium phosphide
47. Implant and characterization of highly concentrated Fe deep centers in InP
48. Two dimensional boron diffusion determination by scanning capacitance microscopy
49. Ultrashallow profiling of semiconductors by secondary ion mass spectrometry:: methods and applications
50. Mid-infrared (3.5 μm) electroluminescence from heavily Fe 2+ ion-implanted semi-insulating InP
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