39 results on '"Chen, Miin-Jang"'
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2. Atomic layer epitaxy of twinned TiN by hydrogen-manipulated tailoring on monolayer
3. High-quality AlN epilayers prepared by atomic layer deposition and large-area rapid electron beam annealing
4. Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors
5. Large area and rapid electron beam annealing for high-quality epitaxial GaN layer
6. Enhancement of energy storage for electrostatic supercapacitors through built-in electric field engineering
7. Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget
8. Conformal atomic layer etching for Ge based on sacrificial oxide with higher Gibbs free energy of formation
9. Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing
10. Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
11. Sub-7-nm textured ZrO2 with giant ferroelectricity
12. Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering
13. Selective growth of platinum nanolines by helium ion beam induced deposition and atomic layer deposition
14. Modulation of ferroelectricity and antiferroelectricity of nanoscale ZrO2 thin films using ultrathin interfacial layers
15. Nucleation engineering for atomic layer deposition of uniform sub-10 nm high-K dielectrics on MoTe2
16. High chemical resistance and Raman enhancement in Ag/Al2O3 core-shell plasmonic nanostructures tailored by atomic layer deposition
17. Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 °C with three-pulsed precursors per growth cycle
18. Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
19. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
20. ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 °C with three-pulsed precursors in every growth cycle
21. Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
22. ZnO/Al2O3 core/shell nanorods array as excellent anti-reflection layers on silicon solar cells
23. The strain dependence of Ge1 − xsnx (x = 0.083) Raman shift
24. Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
25. Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
26. Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen
27. Silicon-based Multi-nanowire Biosensor with High-k Dielectric and Stacked Oxide Sensing Membrane for Cardiac Troponin I Detection
28. Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
29. Alterations in the local structure of the Co/SiO2 dispersed carbon nanotubes induced by CO molecules during microwave irradiation
30. Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing
31. Enhancement of photoluminescence intensity from Si nanodots using Al 2O 3 surface passivation layer grown by atomic layer deposition
32. Temperature-dependent photoluminescence of arsenic-doped Si nanocrystals
33. Thin-film encapsulation of polymer-based bulk-heterojunction photovoltaic cells by atomic layer deposition
34. Enhanced OLED performance upon photolithographic patterning by using an atomic-layer-deposited buffer layer
35. Enhancing electroluminescence from metal-oxide–silicon tunneling diodes by nano-structures of oxide grown by liquid-phase method
36. The band-edge light emission from the metal-oxide-silicon tunneling diode on (1 1 0) substrates
37. Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
38. Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
39. Broadly tunable semiconductor lasers using asymmetric dual quantum wells
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