1. Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots
- Author
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Ivan Makhov, Konstantin Ivanov, Eduard Moiseev, Nikita Fominykh, Anna Dragunova, Natalia Kryzhanovskaya, and Alexey Zhukov
- Subjects
microdisks ,ground-state ,General Chemical Engineering ,excited-state ,two-state lasing ,temperature ,General Materials Science ,quantum dots ,whispering gallery modes - Abstract
One-state and two-state lasing is investigated experimentally and through numerical simulation as a function of temperature in microdisk lasers with Stranski–Krastanow InAs/InGaAs/GaAs quantum dots. Near room temperature, the temperature-induced increment of the ground-state threshold current density is relatively weak and can be described by a characteristic temperature of about 150 K. At elevated temperatures, a faster (super-exponential) increase in the threshold current density is observed. Meanwhile, the current density corresponding to the onset of two-state lasing was found to decrease with increasing temperature, so that the interval of current density of pure one-state lasing becomes narrower with the temperature increase. Above a certain critical temperature, ground-state lasing completely disappears. This critical temperature drops from 107 to 37 °C as the microdisk diameter decreases from 28 to 20 μm. In microdisks with a diameter of 9 μm, a temperature-induced jump in the lasing wavelength from the first excited-state to second excited-state optical transition is observed. A model describing the system of rate equations and free carrier absorption dependent on the reservoir population provides a satisfactory agreement with experimental results. The temperature and threshold current corresponding to the quenching of ground-state lasing can be well approximated by linear functions of saturated gain and output loss.
- Published
- 2023
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