1. Generation Mechanism of Dislocations in Multicrystalline Si during 2D Growth
- Author
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Kutsukake, K., Abe, T., Usami, N., Fujiwara, K., Yonenaga, I., Morishita, K., and Nakajima, K.
- Subjects
Silicon Feedstock, Crystallisation and Wafering ,Wafer-based Silicon Solar Cells and Materials Technology - Abstract
26th European Photovoltaic Solar Energy Conference and Exhibition; 1934-1937, We investigated the generation mechanism of dislocations during the two-dimensional growth of multicrystalline Si by using in situ observation of a growing interface and subsequent analysis of dislocations. Dislocations were found to be frequently generated around impingement points of the growth of crystal grains where Si melt was enclosed by crystal grains when it solidified. However, no dislocations were observed around impingement points of the growth of crystal grains where Si melt was open when it solidified. A scheme for dislocation generation is presented on the basis of the results of our former study on dislocation generation in the unidirectional growth of multicrystalline Si ingots.
- Published
- 2011
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