1. Preparation and modification of ZnSb-based phase change storage films
- Author
-
Xiying Zhou, Wenhua Zhou, Xiao Li, Fan Zhijun, and Lingling Du
- Subjects
010302 applied physics ,Materials science ,Transition temperature ,Doping ,Analytical chemistry ,Activation energy ,Condensed Matter Physics ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Amorphous solid ,law ,Phase (matter) ,0103 physical sciences ,Thermal stability ,Electrical and Electronic Engineering ,Crystallization ,Thin film - Abstract
In this study, the mechanical and electrical properties of Zn–Sb thin films with different Zn contents were focused; the corresponding improvement mechanism is also discussed. It is found that the maximum phase transition temperature of the film is 250 °C when the Zn content is about 50 at%. The crystallization activation energy of the film also reached a maximum of 4.549 eV. The micro-structure analysis result of these annealed films through XRD showed that when the Zn content is less than 50 at.%, the Sb crystallization firstly reduces the amorphous thermal stability of the material, while the film with the highest crystallization activation energy forms the ZnSb phase. Besides, adding N element greatly increases the resistance ratio of the film before and after the phase change and the phase change temperature point, the maximum temperature reaches 265 °C, and the resistance ratio reaches 104 orders of magnitude. The doping of N also increases the density of the deposited film. When the N content is less, some N elements fill the defects caused by physical deposition, increase the density of the film, and increase the phase transition temperature of the film. The N atoms in the film are more likely to bond with Zn when N content is high, forming a Zn–N bond, and even forming a Zn3N2 phase, so that the phase transition temperature of the film is lowered.
- Published
- 2021