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We demonstrate a silicon-organic hybrid (SOH) Mach-Zehnder modulator (MZM) generating four-level amplitude shift keying (4ASK) signals at symbol rates of up to 64 GBd both at room temperature and at an elevated temperature of 80°C. The measured line rate of 128 Gbit/s corresponds to the highest value demonstrated for silicon-based MZM so far. We report bit error ratios of 10−10 (64 GBd BPSK), 10−5 (36 GBd 4ASK), and 4 × 10−3 (64 GBd 4ASK) at room temperature. At 80 °C, the respective bit error ratios are 10−10, 10−4, and 1.3 × 10−2. The high-temperature experiments were performed in regular oxygen-rich ambient atmosphere.

We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 Vpp. For the 16QAM experiment at 112 Gbit/s, we measure a bit error ratio of 5.1 × 10-5 and a record-low energy consumption of only 19 fJ/bit.

We present 160Gb/s all-optical wavelength conversion using an SOA and a 3rd order racetrack resonator integrated on a SOI nanowire platform. The scheme requires 0.5W of electrical power and the power penalty is < 3 dB.

We reported two-magnon Raman scattering from La_{1.9}Sr_{0.1}CuO_4, which has a suppressed Tc=12 K, as the temperature is lowered below 37 K and an ordered spin phase is formed. The two-magnon Raman intensity increases with decreasing temperature. The magnetic scattering in La_{1.9}Sr_{0.1}CuO_4 is totally different from that reported in the parent compound La_2CuO_4. We analyze the line shape of the two-magnon scattering within the traditional Loudon-Fleury theory and find the superexchange constant J=1052 cm^{-1}. The calculation of the frequency moment suggests that the quantum fluctuations are very weak in the system. The room temperature Raman scattering from La_2CuO_4 is also measured. Strong features appear in the one-phonon spectrum at the frequencies of the longitudinal optical (LO) infrared modes which we suggest become Raman active through a Fr\"{o}hlich-interaction., Comment: 6 pages, 4 eps figures, submitted to PRB

Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, neither silicon nor metals exhibit appreciable second-order opti-cal nonlinearities, thereby making efficient electro-optic modula-tors challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) integration, which combine silicon-on-insulator (SOI) waveguides and plasmonic nanostructures with organic electro-optic cladding materials.

We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 Vpp. For the 16QAM experiment at 112 Gbit/s, we measure a bit error ratio of 5.1 × 10-5 and a record-low energy consumption of only 19 fJ/bit.

BOOM is a photonic integration concept that aims to develop compact, cost-effective and power efficient silicon photonic components for high capacity routing functionalities. To accomplish this, flip-chip bonding and heterogeneous wafer scale fabrication techniques are employed that enable Si manufacturing with III-IV material processing. We present in this paper the second generation of BOOM devices that perform all-optical wavelength conversion, label processing and switching on SOI nano-wire boards.

Limitations of silicon photonics can be overcome by hybrid integration of silicon photonic or plasmonic circuits with organic materials or by photonic multi-chip systems. We give an overview on our recent progress regarding both silicon-organic hybrid (SOH) integration and multi-chip integration enabled by photonic wire bonding.