1. Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium
- Author
-
Atsushi Tackeuchi, Xiaohong Zhou, Takao Nukui, Hirokazu Tatsuoka, Sotaro Izumi, Qing Yang, Shu Hua Liang, and Yu Saeki
- Subjects
Thermal oxidation ,Photoluminescence ,Materials science ,Exciton ,General Engineering ,Optical property ,chemistry.chemical_element ,Substrate (electronics) ,medicine.disease_cause ,Photochemistry ,chemistry ,medicine ,General Materials Science ,Gallium ,Layer (electronics) ,Ultraviolet - Abstract
The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.
- Published
- 2014